In this paper we report the study of early stages of oxygen precipitation in commercial Czochralski silicon as-received wafers and in wafers treated at 1100-degrees for 80 min. The high spatial resolution infrared technique used is able to detect platelet shaped SiO2 precipitates, even in low concentrations. We detected a strong polarization dependence of the precipitate related infrared absorption band performing measurements with linearly polarized light. From these results a preferred orientation of a precipitate aggregation was deduced

Borghesi, A., Pivac, B., & Sassella, A. (1993). Oxygen precipitates in short-time annealed Czochralski silicon. JOURNAL OF CRYSTAL GROWTH, 126(1), 63-69 [10.1016/0022-0248(93)90226-M].

Oxygen precipitates in short-time annealed Czochralski silicon

BORGHESI, ALESSANDRO;SASSELLA, ADELE
1993

Abstract

In this paper we report the study of early stages of oxygen precipitation in commercial Czochralski silicon as-received wafers and in wafers treated at 1100-degrees for 80 min. The high spatial resolution infrared technique used is able to detect platelet shaped SiO2 precipitates, even in low concentrations. We detected a strong polarization dependence of the precipitate related infrared absorption band performing measurements with linearly polarized light. From these results a preferred orientation of a precipitate aggregation was deduced
Articolo in rivista - Articolo scientifico
Scientifica
silicon; oxygen precipitation; infrared
English
Borghesi, A., Pivac, B., & Sassella, A. (1993). Oxygen precipitates in short-time annealed Czochralski silicon. JOURNAL OF CRYSTAL GROWTH, 126(1), 63-69 [10.1016/0022-0248(93)90226-M].
Borghesi, A; Pivac, B; Sassella, A
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/34668
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