We studied oxygen precipitation in silicon upon brief sample annealing at 1100-degrees-C by high resolution Fourier transform infrared technique. This technique permits the detection of small agglomerates of disc-shaped precipitates formed in the bulk of annealed silicon wafers. Precipitates are characterized by a peak at 1230 cm-1 in the infrared absorption spectrum. It is further demonstrated that only the disc-shaped precipitates can contribute to the absorption band mentioned. Moreover, the exact wavenumber position of the peak can give additional information about the chemical composition of the oxide constituting the discs
Pivac, B., Borghesi, A., Geddo, M., Sassella, A., Stella, A. (1993). Stoichiometry of oxygen precipitates in silicon. APPLIED SURFACE SCIENCE, 63(1-4), 245-248 [10.1016/0169-4332(93)90099-W].
Stoichiometry of oxygen precipitates in silicon
BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1993
Abstract
We studied oxygen precipitation in silicon upon brief sample annealing at 1100-degrees-C by high resolution Fourier transform infrared technique. This technique permits the detection of small agglomerates of disc-shaped precipitates formed in the bulk of annealed silicon wafers. Precipitates are characterized by a peak at 1230 cm-1 in the infrared absorption spectrum. It is further demonstrated that only the disc-shaped precipitates can contribute to the absorption band mentioned. Moreover, the exact wavenumber position of the peak can give additional information about the chemical composition of the oxide constituting the discs
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