We studied interaction of molten silicon at the meniscus surface with CO and CO2 gas added to an inert argon atmosphere during the growth of edge-defined film-fed growth polycrystalline silicon nonagons. Both gases caused a significant increase in carbon content of the nonagons. However, most carbon remained trapped in the layer close to the surface and made a SiC-like contribution to the infrared spectrum. In addition, CO2 gas caused enhanced surface oxidation (with respect to CO gas).

Pivac, B., Borghesi, A., Sassella, A., Ottolini, L., & Kalejs, J. (1991). Interaction of ambient gas and meniscus surface during growth of edge-defined film-fed growth polycrystalline silicon samples. JOURNAL OF APPLIED PHYSICS, 70(6), 2963 [10.1063/1.349322].

Interaction of ambient gas and meniscus surface during growth of edge-defined film-fed growth polycrystalline silicon samples

BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1991

Abstract

We studied interaction of molten silicon at the meniscus surface with CO and CO2 gas added to an inert argon atmosphere during the growth of edge-defined film-fed growth polycrystalline silicon nonagons. Both gases caused a significant increase in carbon content of the nonagons. However, most carbon remained trapped in the layer close to the surface and made a SiC-like contribution to the infrared spectrum. In addition, CO2 gas caused enhanced surface oxidation (with respect to CO gas).
Articolo in rivista - Articolo scientifico
Scientifica
polycrystalline silicon; infrared
English
Pivac, B., Borghesi, A., Sassella, A., Ottolini, L., & Kalejs, J. (1991). Interaction of ambient gas and meniscus surface during growth of edge-defined film-fed growth polycrystalline silicon samples. JOURNAL OF APPLIED PHYSICS, 70(6), 2963 [10.1063/1.349322].
Pivac, B; Borghesi, A; Sassella, A; Ottolini, L; Kalejs, J
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/34532
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