Carbon complex formation during annealing in the temperature range from 450 to 1150-degrees-C is studied in a carbon-rich polycrystalline edge-defined film-fed grown (EFG) silicon sheet. The result is compared with that obtained in Czochralski (CZ) single-crystal silicon. Infrared (IR) spectroscopy reveals that carbon removal from substitutional sites above 600-degrees-C is greatly inhibited in EFG silicon with respect to that seen in the CZ material. A broad IR peak attributed to C-O complexes appears only after annealing at highest temperatures, while there is no evidence for appearance of the sharp band at 794 cm-1 usually assigned to SiC precipitation. The suppression of carbon complex formation in EFG material is attributed to decreased availability of silicon self-interstitials necessary to promote removal of carbon from substitutional sites and to enhance its diffusivity

Pivac, B., Amiotti, M., Borghesi, A., Sassella, A., & Kalejs, J. (1992). Effect of annealing on carbon concentration in edge-defined film-fed grown polycrystalline silicon. JOURNAL OF APPLIED PHYSICS, 71(8), 3785-3787 [10.1063/1.350890].

Effect of annealing on carbon concentration in edge-defined film-fed grown polycrystalline silicon

BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1992

Abstract

Carbon complex formation during annealing in the temperature range from 450 to 1150-degrees-C is studied in a carbon-rich polycrystalline edge-defined film-fed grown (EFG) silicon sheet. The result is compared with that obtained in Czochralski (CZ) single-crystal silicon. Infrared (IR) spectroscopy reveals that carbon removal from substitutional sites above 600-degrees-C is greatly inhibited in EFG silicon with respect to that seen in the CZ material. A broad IR peak attributed to C-O complexes appears only after annealing at highest temperatures, while there is no evidence for appearance of the sharp band at 794 cm-1 usually assigned to SiC precipitation. The suppression of carbon complex formation in EFG material is attributed to decreased availability of silicon self-interstitials necessary to promote removal of carbon from substitutional sites and to enhance its diffusivity
Articolo in rivista - Articolo scientifico
Scientifica
polycrystalline silicon; infrared
English
Pivac, B., Amiotti, M., Borghesi, A., Sassella, A., & Kalejs, J. (1992). Effect of annealing on carbon concentration in edge-defined film-fed grown polycrystalline silicon. JOURNAL OF APPLIED PHYSICS, 71(8), 3785-3787 [10.1063/1.350890].
Pivac, B; Amiotti, M; Borghesi, A; Sassella, A; Kalejs, J
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/34531
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