Carbon complex formation during annealing in the temperature range from 450 to 1150-degrees-C is studied in a carbon-rich polycrystalline edge-defined film-fed grown (EFG) silicon sheet. The result is compared with that obtained in Czochralski (CZ) single-crystal silicon. Infrared (IR) spectroscopy reveals that carbon removal from substitutional sites above 600-degrees-C is greatly inhibited in EFG silicon with respect to that seen in the CZ material. A broad IR peak attributed to C-O complexes appears only after annealing at highest temperatures, while there is no evidence for appearance of the sharp band at 794 cm-1 usually assigned to SiC precipitation. The suppression of carbon complex formation in EFG material is attributed to decreased availability of silicon self-interstitials necessary to promote removal of carbon from substitutional sites and to enhance its diffusivity
Pivac, B., Amiotti, M., Borghesi, A., Sassella, A., Kalejs, J. (1992). Effect of annealing on carbon concentration in edge-defined film-fed grown polycrystalline silicon. JOURNAL OF APPLIED PHYSICS, 71(8), 3785-3787 [10.1063/1.350890].
Effect of annealing on carbon concentration in edge-defined film-fed grown polycrystalline silicon
BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1992
Abstract
Carbon complex formation during annealing in the temperature range from 450 to 1150-degrees-C is studied in a carbon-rich polycrystalline edge-defined film-fed grown (EFG) silicon sheet. The result is compared with that obtained in Czochralski (CZ) single-crystal silicon. Infrared (IR) spectroscopy reveals that carbon removal from substitutional sites above 600-degrees-C is greatly inhibited in EFG silicon with respect to that seen in the CZ material. A broad IR peak attributed to C-O complexes appears only after annealing at highest temperatures, while there is no evidence for appearance of the sharp band at 794 cm-1 usually assigned to SiC precipitation. The suppression of carbon complex formation in EFG material is attributed to decreased availability of silicon self-interstitials necessary to promote removal of carbon from substitutional sites and to enhance its diffusivity
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