Cd1-xMnxGa2Se4 crystals were grown by the vapor-phase transport technique. Magnetization measurements have been done at 1.5 K and magnetic fields up to 7 T by using extraction method on the samples with 0.05≤x≤1. A modified Brillouin function fits the data and the fitting parameters T0 (≥0) and Seff are obtained. These results reflect that there exists a weak antiferromagnetic interaction among Mn++ ions. The magnetic susceptibility was measured in the temperature range 1.5 K≤T≤300 K by using a vibrating sample magnetometer. The susceptibility displays a high-temperature Curie-Weiss behavior. From quantative analysis the exchange integral constant (J1+2J 2+J3)/kB was obtained to be ∼-1.5 K.

Chen, C., Ma, Y., Li, Y., Wang, X., Borghesi, A., Guizzetti, G., et al. (1993). Magnetization and magnetic susceptibility of the diluted magnetic semiconductor Cd1−xMnxGa2Se4. JOURNAL OF APPLIED PHYSICS, 73(10), 5736 [10.1063/1.353608].

Magnetization and magnetic susceptibility of the diluted magnetic semiconductor Cd1−xMnxGa2Se4

BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1993

Abstract

Cd1-xMnxGa2Se4 crystals were grown by the vapor-phase transport technique. Magnetization measurements have been done at 1.5 K and magnetic fields up to 7 T by using extraction method on the samples with 0.05≤x≤1. A modified Brillouin function fits the data and the fitting parameters T0 (≥0) and Seff are obtained. These results reflect that there exists a weak antiferromagnetic interaction among Mn++ ions. The magnetic susceptibility was measured in the temperature range 1.5 K≤T≤300 K by using a vibrating sample magnetometer. The susceptibility displays a high-temperature Curie-Weiss behavior. From quantative analysis the exchange integral constant (J1+2J 2+J3)/kB was obtained to be ∼-1.5 K.
Articolo in rivista - Articolo scientifico
Scientifica
diluted magnetic semiconductors; magnetization
English
Chen, C., Ma, Y., Li, Y., Wang, X., Borghesi, A., Guizzetti, G., et al. (1993). Magnetization and magnetic susceptibility of the diluted magnetic semiconductor Cd1−xMnxGa2Se4. JOURNAL OF APPLIED PHYSICS, 73(10), 5736 [10.1063/1.353608].
Chen, C; Ma, Y; Li, Y; Wang, X; Borghesi, A; Guizzetti, G; Sassella, A; Viticoli, S
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/34528
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