A detailed analysis of infrared absorption spectra of porous silicon is performed on the basis of high spatial resolution measurements. Microscopic inhomogeneity and a strong influence of storage ambient are observed. Si atoms of the porous silicon surface are found to bind to H, O, C atoms and to CH3 and OH groups. The presence of free H2O molecules is also detected

Borghesi, A., Sassella, A., Pivac, B., & Pavesi, L. (1993). Characterization of porous silicon inhomogeneities by high spatial resolution infrared spectroscopy. SOLID STATE COMMUNICATIONS, 87(1), 1-4 [10.1016/0038-1098(93)90524-Q].

Characterization of porous silicon inhomogeneities by high spatial resolution infrared spectroscopy

BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1993

Abstract

A detailed analysis of infrared absorption spectra of porous silicon is performed on the basis of high spatial resolution measurements. Microscopic inhomogeneity and a strong influence of storage ambient are observed. Si atoms of the porous silicon surface are found to bind to H, O, C atoms and to CH3 and OH groups. The presence of free H2O molecules is also detected
Articolo in rivista - Articolo scientifico
Scientifica
porous silicon; infrared
English
Borghesi, A., Sassella, A., Pivac, B., & Pavesi, L. (1993). Characterization of porous silicon inhomogeneities by high spatial resolution infrared spectroscopy. SOLID STATE COMMUNICATIONS, 87(1), 1-4 [10.1016/0038-1098(93)90524-Q].
Borghesi, A; Sassella, A; Pivac, B; Pavesi, L
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/34522
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