A detailed analysis of infrared absorption spectra of porous silicon is performed on the basis of high spatial resolution measurements. Microscopic inhomogeneity and a strong influence of storage ambient are observed. Si atoms of the porous silicon surface are found to bind to H, O, C atoms and to CH3 and OH groups. The presence of free H2O molecules is also detected
Borghesi, A., Sassella, A., Pivac, B., Pavesi, L. (1993). Characterization of porous silicon inhomogeneities by high spatial resolution infrared spectroscopy. SOLID STATE COMMUNICATIONS, 87(1), 1-4 [10.1016/0038-1098(93)90524-Q].
Characterization of porous silicon inhomogeneities by high spatial resolution infrared spectroscopy
BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1993
Abstract
A detailed analysis of infrared absorption spectra of porous silicon is performed on the basis of high spatial resolution measurements. Microscopic inhomogeneity and a strong influence of storage ambient are observed. Si atoms of the porous silicon surface are found to bind to H, O, C atoms and to CH3 and OH groups. The presence of free H2O molecules is also detected
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