A detailed study of SiH stretching in porous silicon was performed based on the induction model. Good agreement with experimental infrared absorption spectra was achieved considering the oxygen nearest-neighbors and next nearest-neighbors. Carbon presence in the samples was detected and its influence on SiH stretching was determined. © 1994.
Borghesi, A., Guizzetti, G., Sassella, A., Bisi, O., Pavesi, L. (1994). Induction-model analysis of SiH stretching mode in porous silicon. SOLID STATE COMMUNICATIONS, 89(7), 615-618 [10.1016/0038-1098(94)90175-9].
Induction-model analysis of SiH stretching mode in porous silicon
BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1994
Abstract
A detailed study of SiH stretching in porous silicon was performed based on the induction model. Good agreement with experimental infrared absorption spectra was achieved considering the oxygen nearest-neighbors and next nearest-neighbors. Carbon presence in the samples was detected and its influence on SiH stretching was determined. © 1994.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
