A detailed study of SiH stretching in porous silicon was performed based on the induction model. Good agreement with experimental infrared absorption spectra was achieved considering the oxygen nearest-neighbors and next nearest-neighbors. Carbon presence in the samples was detected and its influence on SiH stretching was determined. © 1994.

Borghesi, A., Guizzetti, G., Sassella, A., Bisi, O., & Pavesi, L. (1994). Induction-model analysis of SiH stretching mode in porous silicon. SOLID STATE COMMUNICATIONS, 89(7), 615-618 [10.1016/0038-1098(94)90175-9].

Induction-model analysis of SiH stretching mode in porous silicon

BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1994

Abstract

A detailed study of SiH stretching in porous silicon was performed based on the induction model. Good agreement with experimental infrared absorption spectra was achieved considering the oxygen nearest-neighbors and next nearest-neighbors. Carbon presence in the samples was detected and its influence on SiH stretching was determined. © 1994.
Articolo in rivista - Articolo scientifico
Scientifica
porous silicon; H impurities; infrared
English
Borghesi, A., Guizzetti, G., Sassella, A., Bisi, O., & Pavesi, L. (1994). Induction-model analysis of SiH stretching mode in porous silicon. SOLID STATE COMMUNICATIONS, 89(7), 615-618 [10.1016/0038-1098(94)90175-9].
Borghesi, A; Guizzetti, G; Sassella, A; Bisi, O; Pavesi, L
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/34521
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