A detailed study performed by means of infrared spectroscopy on Si-H stretching in silicon-rich silicon oxide films deposited by chemical vapor deposition is presented. The experimental spectra of as-deposited and annealed samples are interpreted on the basis of a generalization of the random bonding model. The results indicate that two kinds of Si-H bonds exist, one much more stable than the other, whose properties depend on their nearest neighboring atoms. Copyright © 1996 Elsevier Science Ltd.
Borghesi, A., Sassella, A., Pivac, B., Zanotti, L. (1996). Si-H bonding configuration in SiOx : N,H films deposited by chemical vapor deposition. SOLID STATE COMMUNICATIONS, 100(9), 657-661 [10.1016/0038-1098(96)00482-6].
Si-H bonding configuration in SiOx : N,H films deposited by chemical vapor deposition
BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1996
Abstract
A detailed study performed by means of infrared spectroscopy on Si-H stretching in silicon-rich silicon oxide films deposited by chemical vapor deposition is presented. The experimental spectra of as-deposited and annealed samples are interpreted on the basis of a generalization of the random bonding model. The results indicate that two kinds of Si-H bonds exist, one much more stable than the other, whose properties depend on their nearest neighboring atoms. Copyright © 1996 Elsevier Science Ltd.
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