A review is presented of the recent advances in the study of oxygen precipitation and of the main properties of oxide precipitates in silicon. After a general overview of the system "oxygen in silicon,"the thermodynamics and the kinetics of the precipitate formation are treated in detail, with major emphasis on the phenomenology; subsequently, the most important techniques for the characterization of the precipitates are illustrated together with the most interesting and recent results. Finally, the possible influence of oxygen precipitation on technological applications is stressed, with particular attention to recent results regarding device yield. Actually, the essential novelty of this review rests on the attempt to give an extended picture of what has been recently clarified by means of highly sophisticated diagnostic methods and of the influence of precipitation on the properties of semiconductor devices. © 1995 American Institute of Physics.

Borghesi, A., Pivac, B., Sassella, A., Stella, A. (1995). Oxygen precipitation in silicon. JOURNAL OF APPLIED PHYSICS, 77(9), 4169 [10.1063/1.359479].

Oxygen precipitation in silicon

BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1995

Abstract

A review is presented of the recent advances in the study of oxygen precipitation and of the main properties of oxide precipitates in silicon. After a general overview of the system "oxygen in silicon,"the thermodynamics and the kinetics of the precipitate formation are treated in detail, with major emphasis on the phenomenology; subsequently, the most important techniques for the characterization of the precipitates are illustrated together with the most interesting and recent results. Finally, the possible influence of oxygen precipitation on technological applications is stressed, with particular attention to recent results regarding device yield. Actually, the essential novelty of this review rests on the attempt to give an extended picture of what has been recently clarified by means of highly sophisticated diagnostic methods and of the influence of precipitation on the properties of semiconductor devices. © 1995 American Institute of Physics.
Articolo in rivista - Articolo scientifico
silicon; oxygen precipitation
English
1995
77
9
4169
none
Borghesi, A., Pivac, B., Sassella, A., Stella, A. (1995). Oxygen precipitation in silicon. JOURNAL OF APPLIED PHYSICS, 77(9), 4169 [10.1063/1.359479].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/34406
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