High-spatial resolution Fourier transform infrared spectroscopy permitted us to study the effects of incident light polarization on the absorption band related to aggregates of SiO2 disk-shaped precipitates present in annealed (100) Czochralski silicon samples. This is the first report documenting the strong dependence of such a band intensity on light polarization. Experimental results were compared with the simulation obtained using the effective medium theory. From this comparison we deduce that the precipitates only lie on the planes among {100} which are parallel to the wafer surface. This result can be related to the difference between the 〈100〉 direction and those crystallographically equivalent, introduced by the ingot growth process.

Borghesi, A., Pivac, B., & Sassella, A. (1992). Polarization effect on infrared absorption of oxygen precipitates in silicon. APPLIED PHYSICS LETTERS, 60(7), 871 [10.1063/1.107434].

Polarization effect on infrared absorption of oxygen precipitates in silicon

BORGHESI, ALESSANDRO;SASSELLA, ADELE
1992

Abstract

High-spatial resolution Fourier transform infrared spectroscopy permitted us to study the effects of incident light polarization on the absorption band related to aggregates of SiO2 disk-shaped precipitates present in annealed (100) Czochralski silicon samples. This is the first report documenting the strong dependence of such a band intensity on light polarization. Experimental results were compared with the simulation obtained using the effective medium theory. From this comparison we deduce that the precipitates only lie on the planes among {100} which are parallel to the wafer surface. This result can be related to the difference between the 〈100〉 direction and those crystallographically equivalent, introduced by the ingot growth process.
Articolo in rivista - Articolo scientifico
Scientifica
silicon; oxygen precipitation; infrared
English
Borghesi, A., Pivac, B., & Sassella, A. (1992). Polarization effect on infrared absorption of oxygen precipitates in silicon. APPLIED PHYSICS LETTERS, 60(7), 871 [10.1063/1.107434].
Borghesi, A; Pivac, B; Sassella, A
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/34400
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