Gettering of Cr during the growth of silicon sheets from a Cr-doped melt is observed when the solid/liquid interface region is exposed to CO or CO2 gases. The gettering occurs within a region about 1-mum wide at the surface of the crystal, where a large accumulation of carbon and oxygen is detected. Mechanisms for carbon and oxygen participation in forming gettering sites for Cr are examined

Pivac, B., Borghesi, A., Sassella, A., Kalejs, J., & Bathey, B. (1993). In situ Cr gettering in polycrystalline silicon sheets obtained by edge-defined film-fed growth. APPLIED PHYSICS LETTERS, 62(21), 2664-2666 [10.1063/1.109631].

In situ Cr gettering in polycrystalline silicon sheets obtained by edge-defined film-fed growth

Borghesi, A;Sassella, A;
1993

Abstract

Gettering of Cr during the growth of silicon sheets from a Cr-doped melt is observed when the solid/liquid interface region is exposed to CO or CO2 gases. The gettering occurs within a region about 1-mum wide at the surface of the crystal, where a large accumulation of carbon and oxygen is detected. Mechanisms for carbon and oxygen participation in forming gettering sites for Cr are examined
Articolo in rivista - Articolo scientifico
Scientifica
polycrystalline silicon; infrared
English
Pivac, B., Borghesi, A., Sassella, A., Kalejs, J., & Bathey, B. (1993). In situ Cr gettering in polycrystalline silicon sheets obtained by edge-defined film-fed growth. APPLIED PHYSICS LETTERS, 62(21), 2664-2666 [10.1063/1.109631].
Pivac, B; Borghesi, A; Sassella, A; Kalejs, J; Bathey, B
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/34399
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