A critical analysis of the use of infrared spectroscopy to obtain a quantitative evaluation of precipitated oxygen in silicon is presented. Precipitates were detected and studied either indirectly or directly. It is shown that, in both cases, there are some limitations in the reliability of the results, so that a quantitative evaluation of the amount of precipitated oxygen is rarely achievable.
Sassella, A., Borghesi, A., Abe, T. (1998). Quantitative evaluation of precipitated oxygen in silicon by infrared spectroscopy: Still an open problem. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(5), 1715-1719 [10.1149/1.1838545].
Quantitative evaluation of precipitated oxygen in silicon by infrared spectroscopy: Still an open problem
SASSELLA, ADELE;BORGHESI, ALESSANDRO;
1998
Abstract
A critical analysis of the use of infrared spectroscopy to obtain a quantitative evaluation of precipitated oxygen in silicon is presented. Precipitates were detected and studied either indirectly or directly. It is shown that, in both cases, there are some limitations in the reliability of the results, so that a quantitative evaluation of the amount of precipitated oxygen is rarely achievable.
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