Paramagnetic centers were studied in different SiOx:N,H films deposited by plasma-enhanced chemical vapor deposition in a wide composition range. The total dangling-bond concentration is detected to be proportional to the oxygen content. Moreover, sample irradiation by ultraviolet light revealed also that nitrogen impurities play some role. In particular, the presence of N-H bonds induces a release of the film stress, which seems to be related to the concentration of dangling bonds. It is also shown that both weak Si-Si and Si-H bonds may serve as precursors for the dangling-bond formation. © 1999 American Vacuum Society.
Pivac, B., Rakvin, B., Borghesi, A., Sassella, A., Bacchetta, M., Zanotti, L. (1999). Nitrogen influence on dangling-bond configuration in silicon-rich SiO[sub x]:N,H thin films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B, 17(1), 44 [10.1116/1.590546].
Nitrogen influence on dangling-bond configuration in silicon-rich SiO[sub x]:N,H thin films
BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1999
Abstract
Paramagnetic centers were studied in different SiOx:N,H films deposited by plasma-enhanced chemical vapor deposition in a wide composition range. The total dangling-bond concentration is detected to be proportional to the oxygen content. Moreover, sample irradiation by ultraviolet light revealed also that nitrogen impurities play some role. In particular, the presence of N-H bonds induces a release of the film stress, which seems to be related to the concentration of dangling bonds. It is also shown that both weak Si-Si and Si-H bonds may serve as precursors for the dangling-bond formation. © 1999 American Vacuum Society.
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