A suitable choice of one sample among several silicon wafers subjected to two-step thermal treatments for oxygen precipitation permits to reveal a complete series of infrared absorption peaks related to the precipitates formed in the crystal. Structured spectra are observed at 7 K and can be interpreted as due to SiO2 precipitates with different shapes and concentrations. © 1999 American Institute of Physics.
Sassella, A., Borghesi, A., Geranzani, P., Borionetti, G. (1999). Infrared response of oxygen precipitates in silicon: Experimental and simulated spectra. APPLIED PHYSICS LETTERS, 75(8), 1131-1133 [10.1063/1.124619].
Infrared response of oxygen precipitates in silicon: Experimental and simulated spectra
SASSELLA, ADELE;BORGHESI, ALESSANDRO;
1999
Abstract
A suitable choice of one sample among several silicon wafers subjected to two-step thermal treatments for oxygen precipitation permits to reveal a complete series of infrared absorption peaks related to the precipitates formed in the crystal. Structured spectra are observed at 7 K and can be interpreted as due to SiO2 precipitates with different shapes and concentrations. © 1999 American Institute of Physics.
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