Organic-organic heteroepitaxy can represent the winning technique for growing crystalline and oriented heterostructures of organic semiconductors. However, a sound physical interpretation of mechanisms that control epitaxy is still missing for these low symmetry molecular systems, generally not obeying the usual lattice matching rules for inorganic systems. We discuss here a couple of paradigmatic examples of organic- organic heteroepitaxy suggesting a possible physical rationale for the formation of the heterostructure interfaces as it arises from experimental characterization and computer modeling with atom-atom potential simulations.

Moret, M., Borghesi, A., Campione, M., Fumagalli, E., Raimondo, L., Sassella, A. (2011). Organic-organic heteroepitaxy: facts, concepts and perspectives. CRYSTAL RESEARCH AND TECHNOLOGY, 46(8), 827-832 [10.1002/crat.201000581].

Organic-organic heteroepitaxy: facts, concepts and perspectives

MORET, MASSIMO;BORGHESI, ALESSANDRO;CAMPIONE, MARCELLO;FUMAGALLI, ENRICO MARIA;RAIMONDO, LUISA;SASSELLA, ADELE
2011

Abstract

Organic-organic heteroepitaxy can represent the winning technique for growing crystalline and oriented heterostructures of organic semiconductors. However, a sound physical interpretation of mechanisms that control epitaxy is still missing for these low symmetry molecular systems, generally not obeying the usual lattice matching rules for inorganic systems. We discuss here a couple of paradigmatic examples of organic- organic heteroepitaxy suggesting a possible physical rationale for the formation of the heterostructure interfaces as it arises from experimental characterization and computer modeling with atom-atom potential simulations.
Articolo in rivista - Articolo scientifico
epitaxial interface crystallography, molecular modeling, molecular electronics
English
2011
46
8
827
832
none
Moret, M., Borghesi, A., Campione, M., Fumagalli, E., Raimondo, L., Sassella, A. (2011). Organic-organic heteroepitaxy: facts, concepts and perspectives. CRYSTAL RESEARCH AND TECHNOLOGY, 46(8), 827-832 [10.1002/crat.201000581].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/24037
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