This work deals with the structural properties of nanocrystalline (nc) silicon films for solar cell applications, grown using a new PECVD process based on an arc discharge plasma characterized by low ion energies, called LEPECVD (Low energy PECVD). This process permits to increase the intensity of the plasma discharge in the growth region and thus to achieve higher growth rates while avoiding ion-induced surface damage of films. The structural properties of the LEPECVD grown films were studied as a function of the deposition parameters (substrate temperature, growth rate, hydrogen dilution) by Raman Spectroscopy, SEM, and HRTEM analysis. The results of this work allowed us to identify the process requirements suitable for the growth of nc-grains in an amorphous matrix.

Bollani, M., Binetti, S., Acciarri, M., Fumagalli, L., Arcari, A., Pizzini, S., et al. (2003). Characterization of Nanocrystalline Silicon Film grown by LEPECVD for Photovoltaic Applications. In Materials Research Society Symposium - Proceedings (pp.565-570).

Characterization of Nanocrystalline Silicon Film grown by LEPECVD for Photovoltaic Applications

BINETTI, SIMONA OLGA;ACCIARRI, MAURIZIO FILIPPO;Pizzini, S;
2003

Abstract

This work deals with the structural properties of nanocrystalline (nc) silicon films for solar cell applications, grown using a new PECVD process based on an arc discharge plasma characterized by low ion energies, called LEPECVD (Low energy PECVD). This process permits to increase the intensity of the plasma discharge in the growth region and thus to achieve higher growth rates while avoiding ion-induced surface damage of films. The structural properties of the LEPECVD grown films were studied as a function of the deposition parameters (substrate temperature, growth rate, hydrogen dilution) by Raman Spectroscopy, SEM, and HRTEM analysis. The results of this work allowed us to identify the process requirements suitable for the growth of nc-grains in an amorphous matrix.
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Chemical bonds; Doping (additives); Film growth; Nanostructured materials; Photovoltaic cells; Plasma enhanced chemical vapor deposition; Raman spectroscopy; Scanning electron microscopy; Semiconducting silicon; Silicon solar cells; Transmission electron microscopy; Volume fraction, Ion induced damages; Low ion energies, Thin films
English
Conference of Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films
Bollani, M., Binetti, S., Acciarri, M., Fumagalli, L., Arcari, A., Pizzini, S., et al. (2003). Characterization of Nanocrystalline Silicon Film grown by LEPECVD for Photovoltaic Applications. In Materials Research Society Symposium - Proceedings (pp.565-570).
Bollani, M; Binetti, S; Acciarri, M; Fumagalli, L; Arcari, A; Pizzini, S; Von Känel, H
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/23812
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