The use of Raman microscopy for the characterisation of strain in microelectronics could not follow the unceasing downscaling of devices without the use of resonance techniques. An excitation source matching the silicon direct bandgap dramatically reduces the penetration of light without significant loss of signal-to-noise-ratio. The investigated volume is limited to strained regions only, and the result is a far better sensitivity. We present a study of the enhancements and drawbacks brought by this technique when applied to the characterisation of some processes in microelectronics.
Bonera, E., Fanciulli, M. (2005). Resonant Raman microscopy of stress in silicon-based microelectronics. In A.G. Cullis, J.L. Hutchison (a cura di), Microscopy of Semiconducting Materials (pp. 371-374). Springer New York LLC [10.1007/3-540-31915-8_80].
Resonant Raman microscopy of stress in silicon-based microelectronics
Bonera, E;Fanciulli, M
2005
Abstract
The use of Raman microscopy for the characterisation of strain in microelectronics could not follow the unceasing downscaling of devices without the use of resonance techniques. An excitation source matching the silicon direct bandgap dramatically reduces the penetration of light without significant loss of signal-to-noise-ratio. The investigated volume is limited to strained regions only, and the result is a far better sensitivity. We present a study of the enhancements and drawbacks brought by this technique when applied to the characterisation of some processes in microelectronics.
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