The demand for new responsive materials is continuously growing in several areas as a result of approaching the physical limits of technologies, which now calls for a drastic change of strategy. Here, we report on memory responsive oxide-in-oxide nanostructured films obtained by radio-frequency sputtering of a 7.5Li2O-2.5Na2O-20Ga2O3-45GeO2-25SiO2 (mol%) glass target produced by melt quenching. Atomic force microscopy and scanning electron microscopy show that as-deposited oxide layers exhibit native nanophase separation, with the occurrence of Ga-rich oxide nanostructures-about 15 nm thick and 100 nm in diameter-incorporated in oxide layers about 70 nm thick. Interestingly, despite the wide band gap (above 4 eV), the nanostructured oxide films reveal the formation of unconventional electric field dependent charge transport paths across the material. The frequency and temperature dependence of electric conductivity and dielectric function highlights n-type conduction sustained by charge percolation through the oxide layer. Importantly, the results demonstrate the occurrence of conductivity changes by more than an order of magnitude in a few volts, and trapped charge values up to 1016 electrons per cm3.

Remondina, J., Paleari, A., Golubev, N., Ignat’Eva, E., Sigaev, V., Acciarri, M., et al. (2019). Responsive charge transport in wide-band-gap oxide films of nanostructured amorphous alkali-gallium-germanosilicate. JOURNAL OF MATERIALS CHEMISTRY. C, 7(25), 7768-7778 [10.1039/C9TC02080B].

Responsive charge transport in wide-band-gap oxide films of nanostructured amorphous alkali-gallium-germanosilicate

Remondina, Jacopo
Primo
;
Paleari, Alberto
;
Acciarri, Maurizio;Trabattoni, Silvia;SASSELLA, ADELE;Lorenzi, Roberto
Ultimo
2019

Abstract

The demand for new responsive materials is continuously growing in several areas as a result of approaching the physical limits of technologies, which now calls for a drastic change of strategy. Here, we report on memory responsive oxide-in-oxide nanostructured films obtained by radio-frequency sputtering of a 7.5Li2O-2.5Na2O-20Ga2O3-45GeO2-25SiO2 (mol%) glass target produced by melt quenching. Atomic force microscopy and scanning electron microscopy show that as-deposited oxide layers exhibit native nanophase separation, with the occurrence of Ga-rich oxide nanostructures-about 15 nm thick and 100 nm in diameter-incorporated in oxide layers about 70 nm thick. Interestingly, despite the wide band gap (above 4 eV), the nanostructured oxide films reveal the formation of unconventional electric field dependent charge transport paths across the material. The frequency and temperature dependence of electric conductivity and dielectric function highlights n-type conduction sustained by charge percolation through the oxide layer. Importantly, the results demonstrate the occurrence of conductivity changes by more than an order of magnitude in a few volts, and trapped charge values up to 1016 electrons per cm3.
Articolo in rivista - Articolo scientifico
glass-ceramic, impedance spectroscopy, electrical characterization, morphology, thin-film, electrical devices;
English
29-mag-2019
2019
7
25
7768
7778
partially_open
Remondina, J., Paleari, A., Golubev, N., Ignat’Eva, E., Sigaev, V., Acciarri, M., et al. (2019). Responsive charge transport in wide-band-gap oxide films of nanostructured amorphous alkali-gallium-germanosilicate. JOURNAL OF MATERIALS CHEMISTRY. C, 7(25), 7768-7778 [10.1039/C9TC02080B].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/231211
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