In this work we address three-dimensional heterojunctions, demonstrating that photoluminescence from defect-free, Ge/SiGe multiple quantum well (MQW) micro-crystals grown on deeply patterned Si(001) and Si(111) substrates exhibit similar radiative intensity and analogous spectral shape. The finite lateral size and faceted top morphology of the micro-crystals guarantee the absence of dislocations threading through the MQW structure and the dominance of radiative recombination at slanted facets. Our approach yields superior optical quality in comparison to state-of-the-art MQWs grown on SiGe/Si(001) linearly graded buffers.
Isa, F., Pezzoli, F., Isella, G., Meduňa, M., Falub, C., Müller, E., et al. (2015). Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(10), 1-9 [10.1088/0268-1242/30/10/105001].
Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates
PEZZOLI, FABIO
;MIGLIO, LEONIDA
2015
Abstract
In this work we address three-dimensional heterojunctions, demonstrating that photoluminescence from defect-free, Ge/SiGe multiple quantum well (MQW) micro-crystals grown on deeply patterned Si(001) and Si(111) substrates exhibit similar radiative intensity and analogous spectral shape. The finite lateral size and faceted top morphology of the micro-crystals guarantee the absence of dislocations threading through the MQW structure and the dominance of radiative recombination at slanted facets. Our approach yields superior optical quality in comparison to state-of-the-art MQWs grown on SiGe/Si(001) linearly graded buffers.
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