Al:HfO2 is grown on III-V compound substrates by atomic layer deposition after an in situ trimethylaluminum-based preconditioning treatment of the III-V surface. After post-deposition rapid thermal annealing at 700 degrees C, the cubic/tetragonal crystalline phase is stabilized and the chemical composition of the stack is preserved. The observed structural evolution of Al:HfO2 on preconditioned III-V substrates shows that the in-diffusion of semiconductor species from the substrate through the oxide is inhibited. Al-induced stabilization of the Al:HfO2 crystal polymorphs up to 700 degrees C can be used as a permittivity booster methodology with possibly important implications in the stack scaling issues of high-mobility III-V based logic applications.

Cianci, E., Molle, A., Lamperti, A., Wiemer, C., Spiga, S., Fanciulli, M. (2014). Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES, 6(5), 3455-3461 [10.1021/am405617q].

Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition

FANCIULLI, MARCO
Ultimo
2014

Abstract

Al:HfO2 is grown on III-V compound substrates by atomic layer deposition after an in situ trimethylaluminum-based preconditioning treatment of the III-V surface. After post-deposition rapid thermal annealing at 700 degrees C, the cubic/tetragonal crystalline phase is stabilized and the chemical composition of the stack is preserved. The observed structural evolution of Al:HfO2 on preconditioned III-V substrates shows that the in-diffusion of semiconductor species from the substrate through the oxide is inhibited. Al-induced stabilization of the Al:HfO2 crystal polymorphs up to 700 degrees C can be used as a permittivity booster methodology with possibly important implications in the stack scaling issues of high-mobility III-V based logic applications.
Articolo in rivista - Articolo scientifico
phase stabilization; high-k dielectrics; trimethyl-aluminum; atomic layer deposition
English
2014
6
5
3455
3461
none
Cianci, E., Molle, A., Lamperti, A., Wiemer, C., Spiga, S., Fanciulli, M. (2014). Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES, 6(5), 3455-3461 [10.1021/am405617q].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/84243
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