Fe3-delta O4/MgO/Co magnetic tunnel junctions (MTJs) are synthesized on top of similar to 1 inch Si/SiO2 substrates by conducting a full in situ chemical vapour and atomic layer deposition process with no vacuum break. Tunnel magnetoresistance up to 6% is measured at room temperature, increasing to 12.5% at 120 K. Our results demonstrate the possibility of using full-chemical processes to synthesize functional MTJs, and this could provide a path towards the use of cost-effective methods to produce magnetic devices on a large scale.
Mantovan, R., Vangelista, S., Kutrzeba Kotowska, B., Lamperti, A., Manca, N., Pellegrino, L., et al. (2014). Fe3-delta O4/MgO/Co magnetic tunnel junctions synthesized by full in situ atomic layer and chemical vapour deposition. JOURNAL OF PHYSICS D. APPLIED PHYSICS, 47(10) [10.1088/0022-3727/47/10/102002].
Fe3-delta O4/MgO/Co magnetic tunnel junctions synthesized by full in situ atomic layer and chemical vapour deposition
FANCIULLI, MARCOUltimo
2014
Abstract
Fe3-delta O4/MgO/Co magnetic tunnel junctions (MTJs) are synthesized on top of similar to 1 inch Si/SiO2 substrates by conducting a full in situ chemical vapour and atomic layer deposition process with no vacuum break. Tunnel magnetoresistance up to 6% is measured at room temperature, increasing to 12.5% at 120 K. Our results demonstrate the possibility of using full-chemical processes to synthesize functional MTJs, and this could provide a path towards the use of cost-effective methods to produce magnetic devices on a large scale.
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