Cu2ZnSnS4 (CZTS) absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emission around 1.21 eV was observed at low temperature under above bandgap excitation of the as-grown CZTS samples. Broad bands at 1.075 eV and 0.85 eV were detected for the first time under below bandgap excitation of the as-grown CZTS samples at low temperature, which were explained in terms of radiative transitions involving point defect-related levels determined in the literature by first-principles calculations. The emissions observed in the as-grown samples were monitored by both above and below bandgap excitations also in standard CZTS solar cells produced on the same layers. The obtained results suggest that, as in the case of Cu(In, Ga)Se2, Cd atoms passivate point defects at the absorber/buffer layer interface also in CZTS.

LE DONNE, A., Marchionna, S., Garattini, P., Mereu, R., Acciarri, M., Binetti, S. (2015). Effects of CdS buffer layers on photoluminescence properties of Cu2ZnSnS4 solar cells. INTERNATIONAL JOURNAL OF PHOTOENERGY, 2015, 1-8 [10.1155/2015/583058].

Effects of CdS buffer layers on photoluminescence properties of Cu2ZnSnS4 solar cells

LE DONNE, ALESSIA
;
MARCHIONNA, STEFANO
Secondo
;
GARATTINI, PAOLO;MEREU, RALUCA ANCA;ACCIARRI, MAURIZIO FILIPPO
Penultimo
;
BINETTI, SIMONA OLGA
Ultimo
2015

Abstract

Cu2ZnSnS4 (CZTS) absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emission around 1.21 eV was observed at low temperature under above bandgap excitation of the as-grown CZTS samples. Broad bands at 1.075 eV and 0.85 eV were detected for the first time under below bandgap excitation of the as-grown CZTS samples at low temperature, which were explained in terms of radiative transitions involving point defect-related levels determined in the literature by first-principles calculations. The emissions observed in the as-grown samples were monitored by both above and below bandgap excitations also in standard CZTS solar cells produced on the same layers. The obtained results suggest that, as in the case of Cu(In, Ga)Se2, Cd atoms passivate point defects at the absorber/buffer layer interface also in CZTS.
Articolo in rivista - Articolo scientifico
Cu2ZnSnS4, CdS, Point defects passivation, Photoluminescence
English
1
8
8
LE DONNE, A., Marchionna, S., Garattini, P., Mereu, R., Acciarri, M., Binetti, S. (2015). Effects of CdS buffer layers on photoluminescence properties of Cu2ZnSnS4 solar cells. INTERNATIONAL JOURNAL OF PHOTOENERGY, 2015, 1-8 [10.1155/2015/583058].
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