Organic metal-semiconductor transistors, where the gate consists of a low-workfunction metal directly deposited on the semiconductor, are fabricated on rubrene single crystals (see figure). A careful analysis of the current-voltage characteristics and impedance spectroscopy of the corresponding diode leads to the conclusion that the current in the transistor is controlled by a modulation of charge injection from the source electrode. (Figure Presented) © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.
Braga, D., Campione, M., Borghesi, A., Horowitz, G. (2010). Organic metal-semiconductor field effect transistor (OMESFET) made on a rubrene single crystal. ADVANCED MATERIALS, 22(3), 424-428 [10.1002/adma.200902124].
Organic metal-semiconductor field effect transistor (OMESFET) made on a rubrene single crystal
CAMPIONE, MARCELLO;BORGHESI, ALESSANDRO;
2010
Abstract
Organic metal-semiconductor transistors, where the gate consists of a low-workfunction metal directly deposited on the semiconductor, are fabricated on rubrene single crystals (see figure). A careful analysis of the current-voltage characteristics and impedance spectroscopy of the corresponding diode leads to the conclusion that the current in the transistor is controlled by a modulation of charge injection from the source electrode. (Figure Presented) © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.