Organic metal-semiconductor transistors, where the gate consists of a low-workfunction metal directly deposited on the semiconductor, are fabricated on rubrene single crystals (see figure). A careful analysis of the current-voltage characteristics and impedance spectroscopy of the corresponding diode leads to the conclusion that the current in the transistor is controlled by a modulation of charge injection from the source electrode. (Figure Presented) © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.

Braga, D., Campione, M., Borghesi, A., Horowitz, G. (2010). Organic metal-semiconductor field effect transistor (OMESFET) made on a rubrene single crystal. ADVANCED MATERIALS, 22(3), 424-428 [10.1002/adma.200902124].

Organic metal-semiconductor field effect transistor (OMESFET) made on a rubrene single crystal

CAMPIONE, MARCELLO;BORGHESI, ALESSANDRO;
2010

Abstract

Organic metal-semiconductor transistors, where the gate consists of a low-workfunction metal directly deposited on the semiconductor, are fabricated on rubrene single crystals (see figure). A careful analysis of the current-voltage characteristics and impedance spectroscopy of the corresponding diode leads to the conclusion that the current in the transistor is controlled by a modulation of charge injection from the source electrode. (Figure Presented) © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.
Articolo in rivista - Articolo scientifico
organic semiconductor single crystals; field effect transistor;
English
424
428
5
Braga, D., Campione, M., Borghesi, A., Horowitz, G. (2010). Organic metal-semiconductor field effect transistor (OMESFET) made on a rubrene single crystal. ADVANCED MATERIALS, 22(3), 424-428 [10.1002/adma.200902124].
Braga, D; Campione, M; Borghesi, A; Horowitz, G
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/7759
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