We study the response of NAND Flash memories to neutron and alpha particle exposure, with both Single- and Multi-Level Cell architecture devices. We analyze the error rate in the terrestrial environment and discuss scaling trends

Bagatin, M., Gerardin, S., Paccagnella, A., Ferlet Cavrois, V., Visconti, A., Gorini, G., et al. (2013). Neutron and alpha SER in advanced NAND Flash memories. In 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Oxford, UK, 23-27 Sept. 2013 (pp. 1-4). Piscataway, NJ, USA : IEEE [10.1109/RADECS.2013.6937440].

Neutron and alpha SER in advanced NAND Flash memories

GORINI, GIUSEPPE;
2013

Abstract

We study the response of NAND Flash memories to neutron and alpha particle exposure, with both Single- and Multi-Level Cell architecture devices. We analyze the error rate in the terrestrial environment and discuss scaling trends
Capitolo o saggio
Flash; Radiation Effects; Single Event Upset; Neutrons; Alpha Particles
English
14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Oxford, UK, 23-27 Sept. 2013
2013
978-146735057-0
6937440
IEEE
1
4
Bagatin, M., Gerardin, S., Paccagnella, A., Ferlet Cavrois, V., Visconti, A., Gorini, G., et al. (2013). Neutron and alpha SER in advanced NAND Flash memories. In 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Oxford, UK, 23-27 Sept. 2013 (pp. 1-4). Piscataway, NJ, USA : IEEE [10.1109/RADECS.2013.6937440].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/67343
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