Spectroscopic studies of defects and impurities in silicon have been a key factor in the development of silicon-based electronic devices. Silicon is still the material of choice for microelectronic and photovoltaic applications and the candidate for future applications in optoelectronics. For this reason, it is still the subject of dedicated experimental and theoretical research, in particular for clarifying the role of defects in view of the complete exploitation of its potentialities for the development of advanced technological processes.
Binetti, S., Sassella, A. (2014). Investigation of defects and impurities in silicon by infrared and photoluminescence spectroscopies. In G. Kissinger, S. Pizzini (a cura di), Silicon, germanium, and their alloys: growth, defects, impurities and nanocrystals (pp. 323-352). CRC Press [10.1201/b17868-14].
Investigation of defects and impurities in silicon by infrared and photoluminescence spectroscopies
Binetti, S;Sassella, A
2014
Abstract
Spectroscopic studies of defects and impurities in silicon have been a key factor in the development of silicon-based electronic devices. Silicon is still the material of choice for microelectronic and photovoltaic applications and the candidate for future applications in optoelectronics. For this reason, it is still the subject of dedicated experimental and theoretical research, in particular for clarifying the role of defects in view of the complete exploitation of its potentialities for the development of advanced technological processes.
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