In this paper we report on the photoconduction and photovoltaic properties of nanocrystalline silicon. Silicon nanocrystals (Si-ncs) have been prepared by using plasma-enhanced chemical vapor deposition on a p -type silicon substrate. The Si-ncs have been formed into the dielectric of a metal-oxide-semiconductor device. I-V characteristics of the devices have been studied under dark and illumination. Illumination was performed with light in the wavelength range of 350-1630 nm. A photovoltaic effect has been observed in the illuminated I-V characteristics in the range of 350-1100 nm. For longer wavelengths no measurable photovoltaic effect has been observed, but considerable photocurrent has been measured for 1300-1630 nm light under reverse bias condition. This photoresponse is attributed to absorption through subband gap states at the Si-nc and silicon oxynitride matrix interface. © 2008 American Institute of Physics.

Hossain, S., Anopchenko, A., Prezioso, S., Ferraioli, L., Pavesi, L., Pucker, G., et al. (2008). Subband gap photoresponse of nanocrystalline silicon in a metal-oxidesemiconductor device. JOURNAL OF APPLIED PHYSICS, 104(7), 074917 [10.1063/1.2999561].

Subband gap photoresponse of nanocrystalline silicon in a metal-oxidesemiconductor device

BINETTI, SIMONA OLGA;ACCIARRI, MAURIZIO FILIPPO
2008

Abstract

In this paper we report on the photoconduction and photovoltaic properties of nanocrystalline silicon. Silicon nanocrystals (Si-ncs) have been prepared by using plasma-enhanced chemical vapor deposition on a p -type silicon substrate. The Si-ncs have been formed into the dielectric of a metal-oxide-semiconductor device. I-V characteristics of the devices have been studied under dark and illumination. Illumination was performed with light in the wavelength range of 350-1630 nm. A photovoltaic effect has been observed in the illuminated I-V characteristics in the range of 350-1100 nm. For longer wavelengths no measurable photovoltaic effect has been observed, but considerable photocurrent has been measured for 1300-1630 nm light under reverse bias condition. This photoresponse is attributed to absorption through subband gap states at the Si-nc and silicon oxynitride matrix interface. © 2008 American Institute of Physics.
Articolo in rivista - Articolo scientifico
elemental semiconductors, energy gap, MIS devices, nanostructured materials, photoconducting devices, photoconducting materials, photoconductivity, photovoltaic effects, silicon, silicon compounds
English
074917
Hossain, S., Anopchenko, A., Prezioso, S., Ferraioli, L., Pavesi, L., Pucker, G., et al. (2008). Subband gap photoresponse of nanocrystalline silicon in a metal-oxidesemiconductor device. JOURNAL OF APPLIED PHYSICS, 104(7), 074917 [10.1063/1.2999561].
Hossain, S; Anopchenko, A; Prezioso, S; Ferraioli, L; Pavesi, L; Pucker, G; Bellutti, P; Binetti, S; Acciarri, M
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/6018
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