Vertical incidence photodiodes were fabricated from Ge grown epitaxially on Si(100) by low-energy plasma-enhanced chemical vapor deposition. Consideration of the energy band profiles of n-i-p and p-i-n heterostructures, and optimization of growth processes and thermal budget, allowed the performance of Ge photodectors integrated on Si(100) substrates to be optimized. Record low dark current density of Js =4.1× 10-5 A/cm 2 and external quantum efficiency at 1550 nm of =32% were measured. © 2009 American Institute of Physics.
Osmond, J., Isella, G., Chrastina, D., Kaufmann, R., Acciarri, M.F., & von Kaenel, H. (2009). Ultra low dark current Ge/Si(100) photodiodes with low thermal Budget. APPLIED PHYSICS LETTERS, 94(20), 201106.
Citazione: | Osmond, J., Isella, G., Chrastina, D., Kaufmann, R., Acciarri, M.F., & von Kaenel, H. (2009). Ultra low dark current Ge/Si(100) photodiodes with low thermal Budget. APPLIED PHYSICS LETTERS, 94(20), 201106. |
Tipo: | Articolo in rivista - Articolo scientifico |
Carattere della pubblicazione: | Scientifica |
Titolo: | Ultra low dark current Ge/Si(100) photodiodes with low thermal Budget |
Autori: | Osmond, J; Isella, G; Chrastina, D; Kaufmann, R; Acciarri, MF; von Kaenel, H |
Autori: | |
Data di pubblicazione: | 20-mag-2009 |
Lingua: | English |
Rivista: | APPLIED PHYSICS LETTERS |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.3125252 |
Appare nelle tipologie: | 01 - Articolo su rivista |