Vertical incidence photodiodes were fabricated from Ge grown epitaxially on Si(100) by low-energy plasma-enhanced chemical vapor deposition. Consideration of the energy band profiles of n-i-p and p-i-n heterostructures, and optimization of growth processes and thermal budget, allowed the performance of Ge photodectors integrated on Si(100) substrates to be optimized. Record low dark current density of Js =4.1× 10-5 A/cm 2 and external quantum efficiency at 1550 nm of =32% were measured. © 2009 American Institute of Physics.

Osmond, J., Isella, G., Chrastina, D., Kaufmann, R., Acciarri, M., & von Kaenel, H. (2009). Ultra low dark current Ge/Si(100) photodiodes with low thermal Budget. APPLIED PHYSICS LETTERS, 94(20), 201106 [10.1063/1.3125252].

Ultra low dark current Ge/Si(100) photodiodes with low thermal Budget

ACCIARRI, MAURIZIO FILIPPO;
2009

Abstract

Vertical incidence photodiodes were fabricated from Ge grown epitaxially on Si(100) by low-energy plasma-enhanced chemical vapor deposition. Consideration of the energy band profiles of n-i-p and p-i-n heterostructures, and optimization of growth processes and thermal budget, allowed the performance of Ge photodectors integrated on Si(100) substrates to be optimized. Record low dark current density of Js =4.1× 10-5 A/cm 2 and external quantum efficiency at 1550 nm of =32% were measured. © 2009 American Institute of Physics.
Articolo in rivista - Articolo scientifico
photodiodes;external quantum efficiency
English
201106
Osmond, J., Isella, G., Chrastina, D., Kaufmann, R., Acciarri, M., & von Kaenel, H. (2009). Ultra low dark current Ge/Si(100) photodiodes with low thermal Budget. APPLIED PHYSICS LETTERS, 94(20), 201106 [10.1063/1.3125252].
Osmond, J; Isella, G; Chrastina, D; Kaufmann, R; Acciarri, M; von Kaenel, H
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/6009
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