Atomic layer deposition of Al:ZrO(2) films on In(0.53)Ga(0.47)As substrates is shown to be a promising route to boost the oxide permittivity with respect to Al(2)O(3) gate dielectrics and concomitantly take benefit from the reducing effect of the trimethylaluminum precursor on the In(0.53)Ga(0.47)As surface. We demonstrates that increasing the number of initial Al(2)O(3) cycles in the growth sequence can improve the physical quality and the electrical response of the Al:ZrO(2)/In(0.53)Ga(0.47)As interface while preserving the overall composition of the oxide. (C) 2011 The Japan Society of Applied Physics
Molle, A., Lamagna, L., Wiemer, C., Spiga, S., Fanciulli, M., Merckling, C., et al. (2011). Improved Performance of In(0.53)Ga(0.47)As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO(2) Gate Dielectric Grown by Atomic Layer Deposition. APPLIED PHYSICS EXPRESS, 4(9) [10.1143/APEX.4.094103].
Improved Performance of In(0.53)Ga(0.47)As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO(2) Gate Dielectric Grown by Atomic Layer Deposition
FANCIULLI, MARCO;
2011
Abstract
Atomic layer deposition of Al:ZrO(2) films on In(0.53)Ga(0.47)As substrates is shown to be a promising route to boost the oxide permittivity with respect to Al(2)O(3) gate dielectrics and concomitantly take benefit from the reducing effect of the trimethylaluminum precursor on the In(0.53)Ga(0.47)As surface. We demonstrates that increasing the number of initial Al(2)O(3) cycles in the growth sequence can improve the physical quality and the electrical response of the Al:ZrO(2)/In(0.53)Ga(0.47)As interface while preserving the overall composition of the oxide. (C) 2011 The Japan Society of Applied Physics
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