Polymorphism in doped ZrO(2) plays a major role in tailoring the dielectric constant (kappa) of the oxide. In particular, the tetragonal phase is associated with the highest kappa value. In the present study, we analyze La-doped ZrO(2) (La 5\% at.) films grown by atomic layer deposition on Ge (001). X-ray diffraction analysis has been systematically conducted using synchrotron radiation on 14-31 nm thick films both as deposited and annealed at 400 degrees C. Using a grazing incidence methodology the tetragonal an monoclinic phases can be unambiguously detected. Results are corroborated by chemical and electrical analysis. We show that the diffusion of Ge not only stabilizes the tetragonal phase, but also inhibits the formation of the undesired, low-kappa, monoclinic structure. The stabilizing role of low percentages of La is also discussed on the basis of the complementary study of ZrO(2) grown on Ge (001) and of La-doped ZrO(2) grown on Si (001). (C) 2011 The Electrochemical Society. {[DOI: 10.1149/1.3600651] All rights reserved.}

Wiemer, C., Lamperti, A., Lamagna, L., Salicio, O., Molle, A., Fanciulli, M. (2011). Detection of the Tetragonal Phase in Atomic Layer Deposited La-Doped ZrO(2) Thin Films on Germanium. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158(8), G194-G198 [10.1149/1.3600651].

Detection of the Tetragonal Phase in Atomic Layer Deposited La-Doped ZrO(2) Thin Films on Germanium

FANCIULLI, MARCO
2011

Abstract

Polymorphism in doped ZrO(2) plays a major role in tailoring the dielectric constant (kappa) of the oxide. In particular, the tetragonal phase is associated with the highest kappa value. In the present study, we analyze La-doped ZrO(2) (La 5\% at.) films grown by atomic layer deposition on Ge (001). X-ray diffraction analysis has been systematically conducted using synchrotron radiation on 14-31 nm thick films both as deposited and annealed at 400 degrees C. Using a grazing incidence methodology the tetragonal an monoclinic phases can be unambiguously detected. Results are corroborated by chemical and electrical analysis. We show that the diffusion of Ge not only stabilizes the tetragonal phase, but also inhibits the formation of the undesired, low-kappa, monoclinic structure. The stabilizing role of low percentages of La is also discussed on the basis of the complementary study of ZrO(2) grown on Ge (001) and of La-doped ZrO(2) grown on Si (001). (C) 2011 The Electrochemical Society. {[DOI: 10.1149/1.3600651] All rights reserved.}
Articolo in rivista - Articolo scientifico
DIELECTRIC-PROPERTIES; ZIRCONIA
English
2011
158
8
G194
G198
none
Wiemer, C., Lamperti, A., Lamagna, L., Salicio, O., Molle, A., Fanciulli, M. (2011). Detection of the Tetragonal Phase in Atomic Layer Deposited La-Doped ZrO(2) Thin Films on Germanium. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158(8), G194-G198 [10.1149/1.3600651].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/51689
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