It is widely known that the photoluminescence (PL) spectroscopy has became an important characterization tool for multicrystalline silicon (mc-Si) solar cells. Luminescence imaging of crystalline silicon wafers and solar cells has been a subject of interest since it was observed that luminescence from a mc-Si solar cells is spatially inhomogeneous and correlated to the diffusion length of minority carriers. PL imaging of mc-Si has extensively been used to quickly characterize wafers and cells and to detect areas containing defects such as grain boundaries regions and dislocation/defect clusters. On the other hand the spectroscopic identification of defects and impurities in silicon has been a key factor in the development of silicon based electronic devices. For instance oxygen and carbon (the main impurities in electronic silicon) have been studied for more than 60 years by infrared spectroscopy. Dopants and point defects have as well extensively been characterized by photoluminescence spectroscopy at low temperature in monocrystalline silicon. Furthermore, also extended defects like dislocations have been identified by photoluminescence. From the first work related to light emission from dislocation published in 1976 a lot of work has been done both in monocrystalline silicon and recently also in mc-Si for photovoltaic applications. In the frame of silicon based photovoltaics, the role of defects and defects engineering is back in the limelight as upgraded metallurgical silicon is used to produce low cost mc-Si solar cells. In this paper a summary of the main historical results and recent developments in the field of using spectroscopic tools in identification of impurities and defects in silicon material will be discussed. Considering that a lot of articles are relatively dated and often known only to an audience which dealt with silicon microelectronics, the ambitious objective of this work is to bring out the most useful data for the identification of defects in silicon for photovoltaic applications.
Binetti, S., Sassella, A., LE DONNE, A. (2013). Photoluminescence and infrared spectroscopy for the identification of defects in silicon for photovoltaic applications. Intervento presentato a: 2nd Silicon Materials Workshop, Rome, Italy.
Photoluminescence and infrared spectroscopy for the identification of defects in silicon for photovoltaic applications
BINETTI, SIMONA OLGA;SASSELLA, ADELE;LE DONNE, ALESSIA
2013
Abstract
It is widely known that the photoluminescence (PL) spectroscopy has became an important characterization tool for multicrystalline silicon (mc-Si) solar cells. Luminescence imaging of crystalline silicon wafers and solar cells has been a subject of interest since it was observed that luminescence from a mc-Si solar cells is spatially inhomogeneous and correlated to the diffusion length of minority carriers. PL imaging of mc-Si has extensively been used to quickly characterize wafers and cells and to detect areas containing defects such as grain boundaries regions and dislocation/defect clusters. On the other hand the spectroscopic identification of defects and impurities in silicon has been a key factor in the development of silicon based electronic devices. For instance oxygen and carbon (the main impurities in electronic silicon) have been studied for more than 60 years by infrared spectroscopy. Dopants and point defects have as well extensively been characterized by photoluminescence spectroscopy at low temperature in monocrystalline silicon. Furthermore, also extended defects like dislocations have been identified by photoluminescence. From the first work related to light emission from dislocation published in 1976 a lot of work has been done both in monocrystalline silicon and recently also in mc-Si for photovoltaic applications. In the frame of silicon based photovoltaics, the role of defects and defects engineering is back in the limelight as upgraded metallurgical silicon is used to produce low cost mc-Si solar cells. In this paper a summary of the main historical results and recent developments in the field of using spectroscopic tools in identification of impurities and defects in silicon material will be discussed. Considering that a lot of articles are relatively dated and often known only to an audience which dealt with silicon microelectronics, the ambitious objective of this work is to bring out the most useful data for the identification of defects in silicon for photovoltaic applications.
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