Cu2ZnSnS4 (CZTS) thin films were grown with a two-step process. Metal precursors deposited on Mo-coated soda lime glasses by RF sputtering were sulphurised by thermal treatment in sulphur vapours. To optimise the growth process, comprehensive structural characterisation (by electron microscopy, Raman spectroscopy and X-ray diffraction) of the CZTS films was mandatory. The results are reported and discussed herein. Of the many stoichiometries obtained by sulphurisation, Cu-poor/Zn-rich CZTS films were chosen as absorber layers to be tested in photovoltaic devices in order to prevent development of the Cu2−xS secondary phase typical of Cu-rich samples. Electrical characterisation of these CZTS solar cells demonstrates efficiency around 4%
Marchionna, S., Garattini, P., LE DONNE, A., Acciarri, M., Tombolato, S., Binetti, S. (2013). Cu2ZnSnS4 solar cells grown by sulphurisation of sputtered metal precursors. THIN SOLID FILMS, 542, 114-118 [10.1016/j.tsf.2013.06.084].
Cu2ZnSnS4 solar cells grown by sulphurisation of sputtered metal precursors
MARCHIONNA, STEFANO;GARATTINI, PAOLO;LE DONNE, ALESSIA;ACCIARRI, MAURIZIO FILIPPO;TOMBOLATO, SARA;BINETTI, SIMONA OLGA
2013
Abstract
Cu2ZnSnS4 (CZTS) thin films were grown with a two-step process. Metal precursors deposited on Mo-coated soda lime glasses by RF sputtering were sulphurised by thermal treatment in sulphur vapours. To optimise the growth process, comprehensive structural characterisation (by electron microscopy, Raman spectroscopy and X-ray diffraction) of the CZTS films was mandatory. The results are reported and discussed herein. Of the many stoichiometries obtained by sulphurisation, Cu-poor/Zn-rich CZTS films were chosen as absorber layers to be tested in photovoltaic devices in order to prevent development of the Cu2−xS secondary phase typical of Cu-rich samples. Electrical characterisation of these CZTS solar cells demonstrates efficiency around 4%
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