Quantum spin Hall phase in GeSn heterostructures on silicon

Quantum phases of solid-state electron systems can sustain exotic phenomena and a very rich spin physics. We utilize model solid theory to show that Ge1 xSnx alloys, an emerging group IV semiconductor, can be engineered into heterostructures that demonstrate a broken-gap alignment. Furthermore, the eight band kp method is used to disclose a quantum spin Hall phase in heterojunctions that accommodates the existence of gate controlled chiral edge states. This proposal introduces a practical silicon based architecture that spontaneously sustains topological properties, while being compatible with the high volume manufacture of semiconductor technologies.