Noise reduction in radio frequency surface acoustic wave filters, composed of GaN, was investigated. It was observed that compensated buffer layer drastically reduced charge carriers by suppression of signal noise from -50 dB to -70 dB. The acoustic velocity was found to be independent from the layer resistivity, which strongly affected noise level. The results show that suppression of leakage current across GaN film between interdigitized transducers (IDT) is possible by adding a highly resistive GaN buffer layer.
Petroni, S., Tripoli, G., Combi, C., Vigna, B., De Vittorio, M., Todaro, M., et al. (2004). Noise reduction in GaN-based radio frequency surface acoustic wave filters. APPLIED PHYSICS LETTERS, 85(6), 1039-1041 [10.1063/1.1780598].
Noise reduction in GaN-based radio frequency surface acoustic wave filters
Petroni, S
;
2004
Abstract
Noise reduction in radio frequency surface acoustic wave filters, composed of GaN, was investigated. It was observed that compensated buffer layer drastically reduced charge carriers by suppression of signal noise from -50 dB to -70 dB. The acoustic velocity was found to be independent from the layer resistivity, which strongly affected noise level. The results show that suppression of leakage current across GaN film between interdigitized transducers (IDT) is possible by adding a highly resistive GaN buffer layer.
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