The presence of oxygen in silicon single crystals causes the formation of several defects which can make the properties of silicon vary, with a strong influence also on the microelectronic devices subsequently fabricated on the wafers. A brief review of the phenomena connected to oxygen in silicon is presented here, with particular attention to the different effects of interstitial and precipitated oxygen on the silicon properties and to the use of the most widely used physical techniques for their study
Sassella, A. (2002). Defects involving oxygen in crystalline silicon. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 85-86, 285-316 [10.4028/www.scientific.net/SSP.85-86.285].
Defects involving oxygen in crystalline silicon
Sassella, A.
2002
Abstract
The presence of oxygen in silicon single crystals causes the formation of several defects which can make the properties of silicon vary, with a strong influence also on the microelectronic devices subsequently fabricated on the wafers. A brief review of the phenomena connected to oxygen in silicon is presented here, with particular attention to the different effects of interstitial and precipitated oxygen on the silicon properties and to the use of the most widely used physical techniques for their studyI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.