The PL, DLTS and EBIC investigations of p-Si samples plastically deformed in the clean conditions were carried out. For a comparison the samples deformed using set-up made from steel were studied. Oxygen effect on the PL spectra of samples deformed in the clean conditions is revealed. The effect of contamination during deformation was observed by the all three methods.

Acciarri, M., Binetti, S., Feklisova, O., Steinman, E., Yakimov, E. (2004). Electrical and Optical Properties of Dislocations Generated under Pure Conditions. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 95-96, 453-458 [10.4028/www.scientific.net/SSP.95-96.453].

Electrical and Optical Properties of Dislocations Generated under Pure Conditions

ACCIARRI, MAURIZIO FILIPPO;BINETTI, SIMONA OLGA;
2004

Abstract

The PL, DLTS and EBIC investigations of p-Si samples plastically deformed in the clean conditions were carried out. For a comparison the samples deformed using set-up made from steel were studied. Oxygen effect on the PL spectra of samples deformed in the clean conditions is revealed. The effect of contamination during deformation was observed by the all three methods.
Articolo in rivista - Articolo scientifico
Crystal impurities; Crystal structure; Deep level transient spectroscopy; Diffusion; Electron beams; Eutectics; Evaporation; Induced currents; Optical systems; Photoluminescence; Plastic deformation; Silicon, Impurity bands; Recombination activity, Dislocations (crystals)
English
2004
95-96
453
458
none
Acciarri, M., Binetti, S., Feklisova, O., Steinman, E., Yakimov, E. (2004). Electrical and Optical Properties of Dislocations Generated under Pure Conditions. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 95-96, 453-458 [10.4028/www.scientific.net/SSP.95-96.453].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/23809
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