The PL, DLTS and EBIC investigations of p-Si samples plastically deformed in the clean conditions were carried out. For a comparison the samples deformed using set-up made from steel were studied. Oxygen effect on the PL spectra of samples deformed in the clean conditions is revealed. The effect of contamination during deformation was observed by the all three methods.
Acciarri, M., Binetti, S., Feklisova, O., Steinman, E., Yakimov, E. (2004). Electrical and Optical Properties of Dislocations Generated under Pure Conditions. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 95-96, 453-458 [10.4028/www.scientific.net/SSP.95-96.453].
Electrical and Optical Properties of Dislocations Generated under Pure Conditions
ACCIARRI, MAURIZIO FILIPPO;BINETTI, SIMONA OLGA;
2004
Abstract
The PL, DLTS and EBIC investigations of p-Si samples plastically deformed in the clean conditions were carried out. For a comparison the samples deformed using set-up made from steel were studied. Oxygen effect on the PL spectra of samples deformed in the clean conditions is revealed. The effect of contamination during deformation was observed by the all three methods.
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