The homoepitaxial growth by organic molecular beam epitaxy of the organic semiconductor alpha-hexathiophene has been described by scaling theories and classical kinetic tools. Atomic force microscopy has been employed for experimentally extracting kinetic parameters of the growth, in a range of substrate temperatures between 298 and 393 K. Within this range, the critical nucleus size of two-dimensional homoepitaxial islands has been observed to change from one to three molecules, and nucleation has been found to be an activated process with an energy barrier of 0.73 +/- 0.18 eV (17 +/- 4 kcal/mol). This energy barrier is consistent with a growth mechanism in which substantial material re-evaporation occurs.
Campione, M., Caprioli, S., Moret, M., Sassella, A. (2007). Homoepitaxial growth of alpha-hexathiophene. JOURNAL OF PHYSICAL CHEMISTRY. C, 111(34), 12741-12746 [10.1021/jp068616j].
Homoepitaxial growth of alpha-hexathiophene
CAMPIONE, MARCELLO;MORET, MASSIMO;SASSELLA, ADELE
2007
Abstract
The homoepitaxial growth by organic molecular beam epitaxy of the organic semiconductor alpha-hexathiophene has been described by scaling theories and classical kinetic tools. Atomic force microscopy has been employed for experimentally extracting kinetic parameters of the growth, in a range of substrate temperatures between 298 and 393 K. Within this range, the critical nucleus size of two-dimensional homoepitaxial islands has been observed to change from one to three molecules, and nucleation has been found to be an activated process with an energy barrier of 0.73 +/- 0.18 eV (17 +/- 4 kcal/mol). This energy barrier is consistent with a growth mechanism in which substantial material re-evaporation occurs.
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