The mechanical stress induced by Shallow Trench Isolation (STI) has been characterized by using complementary techniques: 1) TCAD simulation compared with UV-μRaman data to determine the lattice misfit strain; 2) full band Monte Carlo simulation and electrical measurements to study the impact on the transport properties. For the first time, an iterative methodology emphasising the synergy among these techniques is presented. The excellent agreement with our electrical data demonstrated that our methodology is a powerful and useful tool to predict the performance of devices with a controlled stress. © 2005 IEEE.
Fantini, P., Ghetti, A., Carnevale, G., Bonera, E., Rideau, D. (2005). A full self-consistent methodology for strain-induced effects characterization in silicon devices. In Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International (pp.992-995). IEEE [10.1109/IEDM.2005.1609529].
A full self-consistent methodology for strain-induced effects characterization in silicon devices
BONERA, EMILIANO;
2005
Abstract
The mechanical stress induced by Shallow Trench Isolation (STI) has been characterized by using complementary techniques: 1) TCAD simulation compared with UV-μRaman data to determine the lattice misfit strain; 2) full band Monte Carlo simulation and electrical measurements to study the impact on the transport properties. For the first time, an iterative methodology emphasising the synergy among these techniques is presented. The excellent agreement with our electrical data demonstrated that our methodology is a powerful and useful tool to predict the performance of devices with a controlled stress. © 2005 IEEE.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
