Defect generation and suppression in device processes using a shallow trench isolation scheme

In this paper the critical factors for defect formation in device processing are identified and various approaches to the problem of defect suppression in device processing are discussed. The mechanisms of stress development are identified by comparing experimental results and numerical simulations. Elastic stress is estimated from Raman shift and TEM-CBED measurements, and defect generation is monitored by electrical measurements of specific monitor structures. Thermal oxidations of the STI structure are shown to be a major responsible of the stress increase. Modifications of the oxidation technology may result in an important stress reduction. Implantation conditions and implantation damage recovery is shown to be another key factor in defect generation. The results of specific experiments are discussed with the purpose of identifying the role of implantation damage and amorphization in defect formation. The recristallization of a highly stressed region results to be a critical step for defect generation.