P-doped Si nanocrystals (radius ≤2 nm) were synthesized by depositing an ultrathin (0.3 nm) P- SiO2 film close to each SiO layer of SiO/SiO2 multilayers. During annealing P atoms migrate into the Si-rich region. Due to the low diffusivity of P in SiO2, P atoms segregate in the Si nanocrystal region and are incorporated in the silicon nanostructures. The P level in the Si nanoclusters can be controlled by changing the P content in the P- SiO2 layer.
Perego, M., Bonafos, C., Fanciulli, M. (2009). Phosphorus doping of ultra-small silicon nanocrystals. NANOTECHNOLOGY, 21(2), 025602 [10.1088/0957-4484/21/2/025602].
Phosphorus doping of ultra-small silicon nanocrystals
FANCIULLI, MARCO
2009
Abstract
P-doped Si nanocrystals (radius ≤2 nm) were synthesized by depositing an ultrathin (0.3 nm) P- SiO2 film close to each SiO layer of SiO/SiO2 multilayers. During annealing P atoms migrate into the Si-rich region. Due to the low diffusivity of P in SiO2, P atoms segregate in the Si nanocrystal region and are incorporated in the silicon nanostructures. The P level in the Si nanoclusters can be controlled by changing the P content in the P- SiO2 layer.File in questo prodotto:
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