To better understand the scintillation mechanism in SrHfO3-based scintillators we investigate in detail their x-ray excited radioluminescence (RL) emissions. The Gaussian decomposition of the undoped SrHfO3 RL spectra manifests the presence of four emission bands peaking at 3.0, 4.0, 4.6, and 5.1 eV. Based on corresponding photoluminescence emission and excitation spectra we tentatively associate the observed bands with excitonic or defect-related emissions. When doped by Ce3+ or Pb2+ luminescent activators, the RL spectra feature two or three new bands, respectively. The temperature dependence of all RL spectra demonstrates a competition between activators and intrinsic or defect centers in carrier capture. Around room temperature the emission process is completely dominated by recombination at activator centers. In the case of Pb2+ activator we also study in detail the concentration dependence of the RL spectra below room temperature exhibiting an optimal value around 0.3 mol %.
Mihóková, E., Chiodini, N., Fasoli, M., Lauria, A., Moretti, F., Nikl, M., et al. (2010). Intrinsic and impurity-induced emission bands in SrHfO_{3}. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 82(16), 165115 [10.1103/PhysRevB.82.165115].
Intrinsic and impurity-induced emission bands in SrHfO_{3}
CHIODINI, NORBERTO;FASOLI, MAURO;LAURIA, ALESSANDRO;MORETTI, FEDERICO;VEDDA, ANNA GRAZIELLA
2010
Abstract
To better understand the scintillation mechanism in SrHfO3-based scintillators we investigate in detail their x-ray excited radioluminescence (RL) emissions. The Gaussian decomposition of the undoped SrHfO3 RL spectra manifests the presence of four emission bands peaking at 3.0, 4.0, 4.6, and 5.1 eV. Based on corresponding photoluminescence emission and excitation spectra we tentatively associate the observed bands with excitonic or defect-related emissions. When doped by Ce3+ or Pb2+ luminescent activators, the RL spectra feature two or three new bands, respectively. The temperature dependence of all RL spectra demonstrates a competition between activators and intrinsic or defect centers in carrier capture. Around room temperature the emission process is completely dominated by recombination at activator centers. In the case of Pb2+ activator we also study in detail the concentration dependence of the RL spectra below room temperature exhibiting an optimal value around 0.3 mol %.File | Dimensione | Formato | |
---|---|---|---|
Mihóková-2010-Phys Rev B-VoR.pdf
Solo gestori archivio
Descrizione: Article
Tipologia di allegato:
Publisher’s Version (Version of Record, VoR)
Licenza:
Tutti i diritti riservati
Dimensione
607.44 kB
Formato
Adobe PDF
|
607.44 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.