To better understand the scintillation mechanism in SrHfO3-based scintillators we investigate in detail their x-ray excited radioluminescence (RL) emissions. The Gaussian decomposition of the undoped SrHfO3 RL spectra manifests the presence of four emission bands peaking at 3.0, 4.0, 4.6, and 5.1 eV. Based on corresponding photoluminescence emission and excitation spectra we tentatively associate the observed bands with excitonic or defect-related emissions. When doped by Ce3+ or Pb2+ luminescent activators, the RL spectra feature two or three new bands, respectively. The temperature dependence of all RL spectra demonstrates a competition between activators and intrinsic or defect centers in carrier capture. Around room temperature the emission process is completely dominated by recombination at activator centers. In the case of Pb2+ activator we also study in detail the concentration dependence of the RL spectra below room temperature exhibiting an optimal value around 0.3 mol %.

Mihóková, E., Chiodini, N., Fasoli, M., Lauria, A., Moretti, F., Nikl, M., et al. (2010). Intrinsic and impurity-induced emission bands in SrHfO_{3}. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 82(16), 165115 [10.1103/PhysRevB.82.165115].

Intrinsic and impurity-induced emission bands in SrHfO_{3}

CHIODINI, NORBERTO;FASOLI, MAURO;LAURIA, ALESSANDRO;MORETTI, FEDERICO;VEDDA, ANNA GRAZIELLA
2010

Abstract

To better understand the scintillation mechanism in SrHfO3-based scintillators we investigate in detail their x-ray excited radioluminescence (RL) emissions. The Gaussian decomposition of the undoped SrHfO3 RL spectra manifests the presence of four emission bands peaking at 3.0, 4.0, 4.6, and 5.1 eV. Based on corresponding photoluminescence emission and excitation spectra we tentatively associate the observed bands with excitonic or defect-related emissions. When doped by Ce3+ or Pb2+ luminescent activators, the RL spectra feature two or three new bands, respectively. The temperature dependence of all RL spectra demonstrates a competition between activators and intrinsic or defect centers in carrier capture. Around room temperature the emission process is completely dominated by recombination at activator centers. In the case of Pb2+ activator we also study in detail the concentration dependence of the RL spectra below room temperature exhibiting an optimal value around 0.3 mol %.
Articolo in rivista - Articolo scientifico
SrHfO_{3}, luminescence, defects
English
2010
82
16
165115
165115
reserved
Mihóková, E., Chiodini, N., Fasoli, M., Lauria, A., Moretti, F., Nikl, M., et al. (2010). Intrinsic and impurity-induced emission bands in SrHfO_{3}. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 82(16), 165115 [10.1103/PhysRevB.82.165115].
File in questo prodotto:
File Dimensione Formato  
Mihóková-2010-Phys Rev B-VoR.pdf

Solo gestori archivio

Descrizione: Article
Tipologia di allegato: Publisher’s Version (Version of Record, VoR)
Licenza: Tutti i diritti riservati
Dimensione 607.44 kB
Formato Adobe PDF
607.44 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/18457
Citazioni
  • Scopus 16
  • ???jsp.display-item.citation.isi??? 15
Social impact