Atomic force and optical microscopy analysis of topographic features on the {001} faces of the organic semiconductor quaterthiophene is employed to establish connections between bulk and surface structure. Observation of interlaced step patterns on growth spirals is indicative of the presence of layers rotated by 180° about the normal of the (001) crystal face. This result, together with the height of the exposed step ledges of the order of 10-100 nm, suggests the complex polytypic nature of these crystals due to periodic polysynthetic twinning. Therefore, the basic monoclinic structure of quaterthiophene is modified giving rise to many different periodicities along [001] even in one crystallite. The consequences on physical properties of these phenomena arising from growth mechanisms are briefly discussed. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
Moret, M., Campione, M., Raimondo, L., Sassella, A., Tavazzi, S., Aquilano, D. (2007). Extended defects in organic molecular semiconductors: the role of crystal growth mechanisms. PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS, 4(3), 711-714 [10.1002/pssc.200673731].
Extended defects in organic molecular semiconductors: the role of crystal growth mechanisms
MORET, MASSIMO;CAMPIONE, MARCELLO;RAIMONDO, LUISA;SASSELLA, ADELE;TAVAZZI, SILVIA;
2007
Abstract
Atomic force and optical microscopy analysis of topographic features on the {001} faces of the organic semiconductor quaterthiophene is employed to establish connections between bulk and surface structure. Observation of interlaced step patterns on growth spirals is indicative of the presence of layers rotated by 180° about the normal of the (001) crystal face. This result, together with the height of the exposed step ledges of the order of 10-100 nm, suggests the complex polytypic nature of these crystals due to periodic polysynthetic twinning. Therefore, the basic monoclinic structure of quaterthiophene is modified giving rise to many different periodicities along [001] even in one crystallite. The consequences on physical properties of these phenomena arising from growth mechanisms are briefly discussed. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
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