We have deposited a 12 nm thick Ge layer on Si(1 0 0) held at 200 °C by thermal evaporation under high vacuum conditions. Upon subsequent thermal annealing in vacuum, self-assembled growth of nanostructural Ge islands on the Ge layer occurred. Atomic force microscopy (AFM) and grazing incidence small-angle X-ray scattering (GISAXS) were used to characterize such layers. GISAXS measurements evidenced the formation of cylinder shaped structures upon annealing at 700 °C, which was confirmed by AFM measurements with a very sharp tip. A Ge mass transport from the layer to the islands was inferred by X-ray reflectivity and an activation energy of 0.40 ± 0.10 eV for such a process was calculated. © 2006 Elsevier B.V. All rights reserved.

Kovacevic, I., Pivac, B., Dubcek, P., Zorc, H., Radic, N., Bernstorff, S., et al. (2007). Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing. APPLIED SURFACE SCIENCE, 253(6), 3034-3040 [10.1016/j.apsusc.2006.06.048].

Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

CAMPIONE, MARCELLO;SASSELLA, ADELE
2007

Abstract

We have deposited a 12 nm thick Ge layer on Si(1 0 0) held at 200 °C by thermal evaporation under high vacuum conditions. Upon subsequent thermal annealing in vacuum, self-assembled growth of nanostructural Ge islands on the Ge layer occurred. Atomic force microscopy (AFM) and grazing incidence small-angle X-ray scattering (GISAXS) were used to characterize such layers. GISAXS measurements evidenced the formation of cylinder shaped structures upon annealing at 700 °C, which was confirmed by AFM measurements with a very sharp tip. A Ge mass transport from the layer to the islands was inferred by X-ray reflectivity and an activation energy of 0.40 ± 0.10 eV for such a process was calculated. © 2006 Elsevier B.V. All rights reserved.
Articolo in rivista - Articolo scientifico
Germanium islands; atomic force microscopy; annealing effects
English
3034
3040
Kovacevic, I., Pivac, B., Dubcek, P., Zorc, H., Radic, N., Bernstorff, S., et al. (2007). Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing. APPLIED SURFACE SCIENCE, 253(6), 3034-3040 [10.1016/j.apsusc.2006.06.048].
Kovacevic, I; Pivac, B; Dubcek, P; Zorc, H; Radic, N; Bernstorff, S; Campione, M; Sassella, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/1788
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