An attractive solution for the preparation of In and Ga free chalcogenides which may allow terawatt range photovoltaic (PV) applications relies on I2-II-IV-VI4 species, such as copper zinc tin sulfide/selenide. A further alternative belonging to this class of materials is Cu2MnSnS4 (CMTS), which consists of abundant and non-toxic elements and shows high absorption coefficient and direct band gap suitable for PV applications. In this work, CMTS thin films were grown on Mo-coated soda lime glasses by a two-step process (evaporation in vacuum of the metal precursors followed by annealing in sulfur vapors). SLG/Mo/Sn/Cu/Mn stack structures were sulfurized at 585°C with an initial step at 115°C to enhance the metal intermixing, paying particular attention to the control of Mn/Sn ratio and to the effect of different annealing ramping rate. Some proof of concept PV device based on Cu-poor/Mn-rich CMTS samples were prepared and tested (efficiency 0.6%, open-circuit voltage 303 mV, short-circuit current density 5.1 mA/cm2, fill factor 38.5%). The beneficial effects of low temperature post-deposition annealing were also investigated, which provided literature record performance (efficiency 0.83%, open-circuit voltage 354 mV, short-circuit current density 5.8 mA/cm2, fill factor 40%)

Le Donne, A., Binetti, S., Acciarri, M., Marchionna, S. (2017). Earth-Abundant Thin Film Solar Cells Based on Cu2MnSnS4. PROCEEDINGS EU PVSEC, 33, 1065-1067 [10.4229/EUPVSEC20172017-3CV.1.15].

Earth-Abundant Thin Film Solar Cells Based on Cu2MnSnS4

Le Donne, A
;
Binetti, S;Acciarri, M;Marchionna, S.
2017

Abstract

An attractive solution for the preparation of In and Ga free chalcogenides which may allow terawatt range photovoltaic (PV) applications relies on I2-II-IV-VI4 species, such as copper zinc tin sulfide/selenide. A further alternative belonging to this class of materials is Cu2MnSnS4 (CMTS), which consists of abundant and non-toxic elements and shows high absorption coefficient and direct band gap suitable for PV applications. In this work, CMTS thin films were grown on Mo-coated soda lime glasses by a two-step process (evaporation in vacuum of the metal precursors followed by annealing in sulfur vapors). SLG/Mo/Sn/Cu/Mn stack structures were sulfurized at 585°C with an initial step at 115°C to enhance the metal intermixing, paying particular attention to the control of Mn/Sn ratio and to the effect of different annealing ramping rate. Some proof of concept PV device based on Cu-poor/Mn-rich CMTS samples were prepared and tested (efficiency 0.6%, open-circuit voltage 303 mV, short-circuit current density 5.1 mA/cm2, fill factor 38.5%). The beneficial effects of low temperature post-deposition annealing were also investigated, which provided literature record performance (efficiency 0.83%, open-circuit voltage 354 mV, short-circuit current density 5.8 mA/cm2, fill factor 40%)
Articolo in rivista - Contributo a Forum/Dibattito, Introduzione
PV Materials, Manufacturing and Processing, Thin Film Solar Cell, Annealing, Electrical Properties, Photoluminescence
English
1065
1067
3
33rd European Photovoltaic Solar Energy Conference and Exhibition
Le Donne, A., Binetti, S., Acciarri, M., Marchionna, S. (2017). Earth-Abundant Thin Film Solar Cells Based on Cu2MnSnS4. PROCEEDINGS EU PVSEC, 33, 1065-1067 [10.4229/EUPVSEC20172017-3CV.1.15].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/174698
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