Thermally stimulated luminescence (TSL) properties of cerium and terbium doped SiO2 sol-gel glasses were studied after X-ray irradiation in the temperature range 10-700 K. The role of Ce3+ and Tb3+ as recombination centers was shown. The existence of a distribution of trap levels was observed; the activation energies of such a distribution were calculated to extend from about 8 x 10(-3) eV up to 1.8 eV for both cerium and terbium doped sol-gel glasses. The effect of a post-densification thermal treatment on TSL properties was also analyzed. (c) 2005 Elsevier B.V. All rights reserved.
Vedda, A., Chiodini, N., DI MARTINO, D., Fasoli, M., Griguta, L., Moretti, F., et al. (2005). Thermally stimulated luminescence of Ce and Tb doped SiO2 sol-gel glasses. JOURNAL OF NON-CRYSTALLINE SOLIDS, 351(49-51), 3699-3703 [10.1016/j.jnoncrysol.2005.10.001].
Thermally stimulated luminescence of Ce and Tb doped SiO2 sol-gel glasses
VEDDA, ANNA GRAZIELLA;CHIODINI, NORBERTO;DI MARTINO, DANIELA;FASOLI, MAURO;MORETTI, FEDERICO;
2005
Abstract
Thermally stimulated luminescence (TSL) properties of cerium and terbium doped SiO2 sol-gel glasses were studied after X-ray irradiation in the temperature range 10-700 K. The role of Ce3+ and Tb3+ as recombination centers was shown. The existence of a distribution of trap levels was observed; the activation energies of such a distribution were calculated to extend from about 8 x 10(-3) eV up to 1.8 eV for both cerium and terbium doped sol-gel glasses. The effect of a post-densification thermal treatment on TSL properties was also analyzed. (c) 2005 Elsevier B.V. All rights reserved.
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