Earth abundant and low cost Cu2MnSnS4 (CMTS) thin films were grown by a two-step vacuum approach: metal precursor stacks grown by thermal evaporation were heat treated in elemental sulfur vapors. Cu-poor/Mn-rich CMTS samples with large grain size and good layer compactness were obtained by sulfurization at 585 °C with an initial step at 115 °C to enhance the metal intermixing. They were primarily tested by Energy Dispersive Spectroscopy, micro-Raman and Photoluminescence. Then, solar cells based on them were realized and tested, showing enhanced performance with respect to a previous study (efficiency 0.5%, open-circuit voltage 302 mV, short-circuit current density 4.6 mA/cm2, fill factor 36%). A 40 min post-deposition annealing in air at 225 °C significantly improved the performance of these emerging PV devices (efficiency 0.83%, open-circuit voltage 354 mV, short-circuit current density 5.8 mA/cm2, fill factor 40%). The beneficial effects of the low temperature annealing were investigated, in terms both of material properties and PV device performance modification

LE DONNE, A., Marchionna, S., Acciarri, M., Cernuschi, F., Binetti, S. (2017). Relevant efficiency enhancement of emerging Cu2MnSnS4 thin film solar cells by low temperature annealing. SOLAR ENERGY, 149, 125-131 [10.1016/j.solener.2017.03.087].

Relevant efficiency enhancement of emerging Cu2MnSnS4 thin film solar cells by low temperature annealing

LE DONNE, ALESSIA
;
MARCHIONNA, STEFANO
Secondo
;
ACCIARRI, MAURIZIO FILIPPO;BINETTI, SIMONA OLGA
Ultimo
2017

Abstract

Earth abundant and low cost Cu2MnSnS4 (CMTS) thin films were grown by a two-step vacuum approach: metal precursor stacks grown by thermal evaporation were heat treated in elemental sulfur vapors. Cu-poor/Mn-rich CMTS samples with large grain size and good layer compactness were obtained by sulfurization at 585 °C with an initial step at 115 °C to enhance the metal intermixing. They were primarily tested by Energy Dispersive Spectroscopy, micro-Raman and Photoluminescence. Then, solar cells based on them were realized and tested, showing enhanced performance with respect to a previous study (efficiency 0.5%, open-circuit voltage 302 mV, short-circuit current density 4.6 mA/cm2, fill factor 36%). A 40 min post-deposition annealing in air at 225 °C significantly improved the performance of these emerging PV devices (efficiency 0.83%, open-circuit voltage 354 mV, short-circuit current density 5.8 mA/cm2, fill factor 40%). The beneficial effects of the low temperature annealing were investigated, in terms both of material properties and PV device performance modification
Articolo in rivista - Articolo scientifico
Cu2MnSnS4; Earth-abundant; Post-deposition annealing; Thin film solar cells; Renewable Energy, Sustainability and the Environment; Materials Science (all)
English
2017
149
125
131
partially_open
LE DONNE, A., Marchionna, S., Acciarri, M., Cernuschi, F., Binetti, S. (2017). Relevant efficiency enhancement of emerging Cu2MnSnS4 thin film solar cells by low temperature annealing. SOLAR ENERGY, 149, 125-131 [10.1016/j.solener.2017.03.087].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/151740
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