In the thin film solar cells domain, copper indium galium (di)selenide (CIGS) is a material with well-established photovoltaic purpose. Here the presence of a suitable [Ga]/([Ga]+[In]) (GGI) in-depth profile has proved to play a key role in the performance of cells. The implementation of a routine method based on reliable but easily available experimental techniques is mandatory to obtain information on the GGI profile of any CIGS layer, in order to achieve high efficiency chalcogenide layers. In this vein, we here propose and systematically test a simple method for the GGI profile determination based on repeated bromine etching of CIGS thin films followed by Raman analysis of the A1 peak position. The reliability of the proposed approach is verified using a methodical comparison with energy-dispersive X-ray spectroscopy (EDS) analysis and secondary ion mass spectroscopy (SIMS) profiles, showing a good agreement with the GGI in-depth profiles determined using Raman analysis on bromine etched samples.

Parravicini, J., Acciarri, M., Lomuscio, A., Murabito, M., Le Donne, A., Gasparotto, A., et al. (2017). Gallium In-Depth Profile in Bromine-Etched Copper–Indium–Galium–(Di)selenide (CIGS) Thin Films Inspected Using Raman Spectroscopy. APPLIED SPECTROSCOPY, 71(6), 1334-1339 [10.1177/0003702816681568].

Gallium In-Depth Profile in Bromine-Etched Copper–Indium–Galium–(Di)selenide (CIGS) Thin Films Inspected Using Raman Spectroscopy

PARRAVICINI, JACOPO
;
Acciarri, M;LE DONNE, ALESSIA;BINETTI, SIMONA OLGA
2017

Abstract

In the thin film solar cells domain, copper indium galium (di)selenide (CIGS) is a material with well-established photovoltaic purpose. Here the presence of a suitable [Ga]/([Ga]+[In]) (GGI) in-depth profile has proved to play a key role in the performance of cells. The implementation of a routine method based on reliable but easily available experimental techniques is mandatory to obtain information on the GGI profile of any CIGS layer, in order to achieve high efficiency chalcogenide layers. In this vein, we here propose and systematically test a simple method for the GGI profile determination based on repeated bromine etching of CIGS thin films followed by Raman analysis of the A1 peak position. The reliability of the proposed approach is verified using a methodical comparison with energy-dispersive X-ray spectroscopy (EDS) analysis and secondary ion mass spectroscopy (SIMS) profiles, showing a good agreement with the GGI in-depth profiles determined using Raman analysis on bromine etched samples.
Articolo in rivista - Articolo scientifico
Photovoltaic materials, Raman spectroscopy, thin films
English
1334
1339
6
Parravicini, J., Acciarri, M., Lomuscio, A., Murabito, M., Le Donne, A., Gasparotto, A., et al. (2017). Gallium In-Depth Profile in Bromine-Etched Copper–Indium–Galium–(Di)selenide (CIGS) Thin Films Inspected Using Raman Spectroscopy. APPLIED SPECTROSCOPY, 71(6), 1334-1339 [10.1177/0003702816681568].
Parravicini, J; Acciarri, M; Lomuscio, A; Murabito, M; LE DONNE, A; Gasparotto, A; Binetti, S
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/149322
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