The composition of GeO2 films grown on Ge has been studied for different molecular deposition processes and after exposure to ambient air. The stoichiometry, the interaction with moisture, and the interfacial details of the films are shown to be dramatically process dependent.
Molle, A., Spiga, S., Fanciulli, M. (2008). Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition. THE JOURNAL OF CHEMICAL PHYSICS, 129(1), 011104 [10.1063/1.2955446].
Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition
FANCIULLI, MARCO
2008
Abstract
The composition of GeO2 films grown on Ge has been studied for different molecular deposition processes and after exposure to ambient air. The stoichiometry, the interaction with moisture, and the interfacial details of the films are shown to be dramatically process dependent.
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