Fabricating Cu(In,Ga)Se2 solar cells on flexible substrates by a new roll-to-roll deposition system suitable for industrial applications

In this work, a new hybrid sputtering-evaporation system providing a scalable process for deposition of Cu(In,Ga)Se2 (CIGS) layers is presented. The growth apparatus has been designed and realized to fit a size suitable for direct industrial transfer. In this process the metal precursors are first of all sputtered on rotating transfer devices, then evaporated on the substrate by local heating in a Se atmosphere. The desired thickness and composition of the CIGS film are obtained by repeated sputtering-evaporation cycles. The cylindrical geometry of the deposition chamber has been designed to accommodate different types of flexible substrates with a maximum size of 20 �120 cm2 in a roll-to-roll configuration. Several techniques, including secondary ion mass spectrometry, Raman and photoluminescence spectroscopies, x-ray diffraction, scanning electron microscopy, external quantum efficiency, and I-V under 1 Sun illumination, have been used to test both the as-grown CIGS layers and the solar cell devices based on them. A significant performance and good control of Ga grading and Na content were obtained for solar cells grown at 450 �C on polyimide substrates with high deposition rates. In spite of the fact that the present efficiency record for CIGS solar cells on polyimide substrates is 20.4%, the 10.1% obtained using the hybrid method presented in this work is significant because the growth apparatus meets the requirements for direct industrial transfer. In fact, this process is being transferred in a 1 MW production line, where standard CIGS layers are deposited at low temperature on flexible substrates in a single-step process with a 1 mm sec-1 substrate velocity.