NOETZEL, RICHARD
NOETZEL, RICHARD
DIPARTIMENTO DI SCIENZA DEI MATERIALI
A photodetector for red and green with balanced negative and positive photocurrent for imaging is realized
2025 Pu, X; Deng, R; Yang, G; Zhang, W; Lin, H; Li, J; Noetzel, R
From localization to quantum-dot chains in self-formed core-shell InGaN nanowires emitting in the red
2025 Deng, R; Lin, H; Hu, Q; Wang, D; Wu, B; Nötzel, R
Evidence of two-dimensional lateral quantum confinement in self-formed core-shell InGaN nanowires on Si (111) emitting in the red
2024 Deng, R; Pan, X; Lin, H; Li, J; Notzel, R
Fast self-powered n-InGaN layer/p-Cu2O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity
2024 Zhang, W; Deng, R; Luo, M; Hong, H; Pan, X; Notzel, R
Sign reversal of visible to UV photocurrent in core-shell n-InGaN/p-GaN nanowire photodetectors
2024 Pan, X; Deng, R; Hong, H; Luo, M; Notzel, R
Super-Nernstian potentiometric response of InN/InGaN quantum dots by fractional electron transfer
2024 Deng, R; Pan, X; Yang, G; Lin, H; Li, J; Notzel, R
Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core-Shell InGaN Nanowires
2024 Deng, R; Pu, X; Yang, G; Zhang, W; Lin, H; Li, J; Notzel, R
Transition from Metal-Rich to N-Rich Growth for Core-Shell InGaN Nanowires on Si (111) at the Onset of In Desorption
2024 Deng, R; Pan, X; Hong, H; Yang, G; Pu, X; Song, J; Notzel, R
Erratum: Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector (IEEE Transactions on Electron Devices (2022) 69:11 (6184-6187) DOI: 10.1109/TED.2022.3206181)
2023 Song, J; Shu, K; Wang, J; Wang, X; Huo, N; Notzel, R
In Desorption in InGaN Nanowire Growth on Si Generates a Unique Light Emitter: From In-Rich InGaN to the Intermediate Core-Shell InGaN to Pure GaN
2023 Pan, X; Hong, H; Deng, R; Luo, M; Notzel, R
Planar GaN/Cu2O Microcrystal Composite Junction Photoanode for Efficient Solar Water Splitting
2023 Hong, H; Song, J; Pan, X; Luo, M; Notzel, R
Red InGaN nanowire LED with bulk active region directly grown on p-Si (111)
2023 Pan, X; Song, J; Hong, H; Luo, M; Notzel, R
An InN/InGaN quantum dot nonlinear constant phase element
2022 Peng, Y; Xie, L; Wang, J; Qin, L; Notzel, R
Comparison of InN/InGaN quantum dot and nanowire hydrogen peroxide and glucose photofuel cells: A case study
2022 Qin, L; Xie, L; Chen, Y; Nötzel, R
InN/InGaN Quantum Dot Abiotic One-Compartment Glucose Photofuel Cell: Power Supply and Sensing
2022 Xie, L; Chen, Y; Zhao, Y; Zhou, G; Notzel, R
Noise logic with an InGaN/SiNx/Si uniband diode photodetector
2022 Song, J; Notzel, R
Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector
2022 Song, J; Shu, K; Wang, J; Wang, X; Huo, N; Notzel, R
Ultraviolet photoelectrochemical photodetector based on GaN/Cu2O core-shell nanowire p-n heterojunctions
2022 Luo, M; Song, J; Wang, J; Pan, X; Hong, H; Notzel, R
Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p-n junctions
2022 Wang, J; Song, J; Qin, L; Peng, Y; Notzel, R
3D InGaN nanowire arrays on oblique pyramid-textured Si (311) for light trapping and solar water splitting enhancement
2021 Chen, H; Wang, P; Wang, X; Wang, X; Rao, L; Qian, Y; Yin, H; Hou, X; Ye, H; Zhou, G; Notzel, R