Scintillation, radioluminescence, photoluminescence, and thermoluminescence characteristics of Czochralski-grown YbxY1-xAlO3 single crystals for x=0.02-0.45 are described. Under x-ray excitation, the intensity of Yb3+ charge-transfer luminescence is increasing with x and reaches at room temperature more than 11% of Bi4Ge3O12 (BGO) for x=0.45, while at 80 K it is over 170% of BGO for xgreater than or equal to0.3. At room temperature, scintillation decay shows a dominant decay time of 0.8-0.9 ns for xgreater than or equal to0.3 and no significant slow components were detected. The photoluminescence decay time is tuned by temperature and Yb concentration from tens of nanoseconds at 80 K down to about 0.8 ns at 295 K. Thermoluminescence glow curve below room temperature evidences very low concentration of shallow traps compared to the Ce-doped YAlO3 scintillator. (C) 2004 American Institute of Physics.
Nikl, M., Solovieva, N., Pejchal, J., Shim, J., Yoshikawa, A., Fukuda, T., et al. (2004). Very fast YbxY1-xAlO3 single-crystal scintillators. APPLIED PHYSICS LETTERS, 84(6), 882-884 [10.1063/1.1645987].
Very fast YbxY1-xAlO3 single-crystal scintillators
VEDDA, ANNA GRAZIELLA;MARTINI, MARCO;
2004
Abstract
Scintillation, radioluminescence, photoluminescence, and thermoluminescence characteristics of Czochralski-grown YbxY1-xAlO3 single crystals for x=0.02-0.45 are described. Under x-ray excitation, the intensity of Yb3+ charge-transfer luminescence is increasing with x and reaches at room temperature more than 11% of Bi4Ge3O12 (BGO) for x=0.45, while at 80 K it is over 170% of BGO for xgreater than or equal to0.3. At room temperature, scintillation decay shows a dominant decay time of 0.8-0.9 ns for xgreater than or equal to0.3 and no significant slow components were detected. The photoluminescence decay time is tuned by temperature and Yb concentration from tens of nanoseconds at 80 K down to about 0.8 ns at 295 K. Thermoluminescence glow curve below room temperature evidences very low concentration of shallow traps compared to the Ce-doped YAlO3 scintillator. (C) 2004 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.